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Titolo:
TEM/AFM observation of crack tip plasticity in silicon single crystals
Autore:
Tanaka, M; Fukui, T; Yamagata, T; Morikawa, T; Higashida, K; Onodera, R;
Indirizzi:
Kyushu Univ, Fac Engn, Dept Mat Sci & Engn, Fukuoka 8128581, Japan Kyushu Univ Fukuoka Japan 8128581 Mat Sci & Engn, Fukuoka 8128581, Japan
Titolo Testata:
MATERIALS TRANSACTIONS
fascicolo: 9, volume: 42, anno: 2001,
pagine: 1839 - 1842
SICI:
1345-9678(200109)42:9<1839:TOOCTP>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRON-MICROSCOPY; DUCTILE TRANSITION; BRITTLE;
Keywords:
silicon crystal; crack; dislocation; fracture; transmission electron microscopy; high voltage electron microscopy; atomic force microscopy; brittle-to-ductile transition; toughness;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Tanaka, M Kyushu Univ, Fac Engn, Dept Mat Sci & Engn, Fukuoka 8128581, Japan Kyushu Univ Fukuoka Japan 8128581 Engn, Fukuoka 8128581, Japan
Citazione:
M. Tanaka et al., "TEM/AFM observation of crack tip plasticity in silicon single crystals", MATER TRANS, 42(9), 2001, pp. 1839-1842

Abstract

Crack tip plasticity in silicon single crystals has been investigated using both high voltage electron microscopy (HVEM) and atomic force microscopy (AFM). Cracks were introduced into a (001) silicon wafer at room temperature by Vickers indentation method. The specimen temperature was increased to more than 873 K to activate dislocation generation around the crack tip under a residual stress due to the indentation. In specimens without the heat-treatment, no dislocations were observed around the crack, while in specimens with the heat-treatment, characteristic dislocation configurations were observed near the crack tip. AFM observations showed that slip bands were formed around the crack tip in the heat-treated specimens, and that the stepheights of those slip bands were around one nanometer. Such crack tip plasticity is considered to be caused by mainly mode I tensile load, and contribute to increasing fracture toughness.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/04/20 alle ore 02:44:32