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Titolo:
Unintentional incorporation of B, As, and O impurities in GaN grown by molecular beam epitaxy
Autore:
Kim, H; Falth, FJ; Andersson, TG;
Indirizzi:
Chalmers Univ Technol, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden Chalmers Univ Technol Gothenburg Sweden S-41296 41296 Gothenburg, Sweden Gothenburg Univ, S-41296 Gothenburg, Sweden Gothenburg Univ Gothenburg Sweden S-41296 iv, S-41296 Gothenburg, Sweden
Titolo Testata:
JOURNAL OF ELECTRONIC MATERIALS
fascicolo: 10, volume: 30, anno: 2001,
pagine: 1343 - 1347
SICI:
0361-5235(200110)30:10<1343:UIOBAA>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
OXYGEN; DEFECTS; ALGAN; SURFACE; DONORS; FILMS;
Keywords:
MBE; GaN; impurities; secondary ion mass spectrometry;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
27
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, H Chalmers Univ Technol, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden Chalmers Univ Technol Gothenburg Sweden S-41296 othenburg, Sweden
Citazione:
H. Kim et al., "Unintentional incorporation of B, As, and O impurities in GaN grown by molecular beam epitaxy", J ELEC MAT, 30(10), 2001, pp. 1343-1347

Abstract

We have investigated systematically the effects of growth parameters upon the unintentional incorporation of B, As, and O impurities in GaN grown by molecular beam epitaxy with an RF-plasma activated nitrogen source. The prepared samples were analyzed using secondary ion mass spectrometry to determine the absolute concentration of the impurities. The boron background concentration in the unintentionally doped GaN was found to strongly correlate with the nitrogen plasma power used during the growth, indicating a decomposition of the pBN crucible in the plasma source. Due to previous GaAs growth in the same chamber, a considerably large amount of As contamination (similar to3 x 10(18) at/cm(3)) was also observed in the grown layer. The presence of Al in GaN is found to facilitate the incorporation of oxygen impurities in the layer. We determined an empirical formula, C-o(t) /C-o(b) = 3.8 x (C-Al/C-Al')(0.27), representing the correlation between O concentration and Al mole fraction (%) in the small range of Al content., 0.03 similar to1%, in the layer. The residual oxygen level was substantially reduced from 3.4 x 10(19) to mid-10(18) at/cm(3) in the GaN layer when the buffer layer structure was changed from low temperature grown GaN single buffer to GaN/AlN double buffer layer. We ascribe this significantly lowered oxygen impurity level to improved crystalline quality of the layer due to the double buffer layer structure.

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Documento generato il 05/04/20 alle ore 22:59:40