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Titolo:
Ballistic magnetoresistance in a nanocontact between a Ni cluster and a magnetic thin film
Autore:
Munoz, M; Qian, GG; Karar, N; Cheng, H; Saveliev, IG; Garcia, N; Moffat, TP; Chen, PJ; Gan, L; Egelhoff, WF;
Indirizzi:
CSIC, Lab Fis Sistemas Pequenos & Nanotecnol, E-28006 Madrid, Spain CSIC Madrid Spain E-28006 s Pequenos & Nanotecnol, E-28006 Madrid, Spain Natl Inst Stand & Technol, Gaithersburg, MD 20988 USA Natl Inst Stand & Technol Gaithersburg MD USA 20988 ersburg, MD 20988 USA
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 18, volume: 79, anno: 2001,
pagine: 2946 - 2948
SICI:
0003-6951(20011029)79:18<2946:BMIANB>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Garcia, N CSIC, Lab Fis Sistemas Pequenos & Nanotecnol, Serrano 144, E-28006 Madrid,Spain CSIC Serrano 144 Madrid Spain E-28006 144, E-28006 Madrid,Spain
Citazione:
M. Munoz et al., "Ballistic magnetoresistance in a nanocontact between a Ni cluster and a magnetic thin film", APPL PHYS L, 79(18), 2001, pp. 2946-2948

Abstract

We present measurements of ballistic magnetoresistance in nanocontacts grown by electrodeposition of Ni microclusters on magnetic thin films covered by aluminum oxide layers, using a technique proposed by Schad [D. Allen, R. Schad, G. Zangari, I. Zana, D. Yang, M. C. Tondra, and D. Wang, J. Vac. Sci. Technol. A. 18, 1830 (2000); Appl. Phys. Lett. 76, 407 (2000); D. Allen,R. Schad, G. Zangari, I. Zana, D. Yang, M. C. Tondra, D. Wang, and D. Reed, J. Appl. Phys. 89, 6662 (2001)]. The measurements are made on single Ni clusters in contact with a Ni and Co thin film. We measure the magnetoresistance and observe the relaxation of the magnetization and electrical resistance as a function of time. The clusters are electrodeposited under several different experimental conditions. Some are deposited randomly on an unpatterned film and some through various patterned photoresists that control thelocation at which the cluster is grown. The typical contact size is estimated from the electrical resistance to be 10-30 nm. Ballistic magnetoresistance values up to 14% are obtained in these first experiments. (C) 2001 American Institute of Physics.

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Documento generato il 09/07/20 alle ore 20:39:45