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Titolo:
Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes
Autore:
Kent, DG; Lee, KP; Zhang, AP; Luo, B; Overberg, ME; Abernathy, CR; Ren, F; Mackenzie, KD; Pearton, SJ; Nakagawa, Y;
Indirizzi:
Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA Univ Florida Gainesville FL USA 32611 hem Engn, Gainesville, FL 32611 USA Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA Univ FloridaGainesville FL USA 32611 i & Engn, Gainesville, FL 32611 USA Unaxis USA Inc, St Petersburg, FL 33703 USA Unaxis USA Inc St Petersburg FL USA 33703 nc, St Petersburg, FL 33703 USA Nichia Chem Inst, Tokushima 89165, Japan Nichia Chem Inst Tokushima Japan 89165 Chem Inst, Tokushima 89165, Japan
Titolo Testata:
SOLID-STATE ELECTRONICS
fascicolo: 10, volume: 45, anno: 2001,
pagine: 1837 - 1842
SICI:
0038-1101(200110)45:10<1837:EEONPE>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
GALLIUM NITRIDE;
Keywords:
p- and n-GaN Schottky diodes; annealing recovery; plasma damage; chamber pressure effect; AFM surface roughness; nitridation of nitride substrate;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Ren, F Univ Florida, Dept Chem Engn, POB 116005, Gainesville, FL 32611 USAUniv Florida POB 116005 Gainesville FL USA 32611 ille, FL 32611 USA
Citazione:
D.G. Kent et al., "Electrical effects of N-2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes", SOL ST ELEC, 45(10), 2001, pp. 1837-1842

Abstract

Exposure of dry-etch damaged p- and n-GaN to a N-2 plasma at elevated temperatures (175-350 degreesC) is found to produce partial recovery of the electrical properties of the near-surface region. The recovery is due to two mechanisms an annealing effect and a nitridation of the initially N-2 deficient surface. A degree of surface smoothing was also obtained with N-2 plasma exposure. The extent of the damage recovery is less than complete for both conductivity types of GaN. (C) 2001 Published by Elsevier Science Ltd.

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Documento generato il 08/04/20 alle ore 12:11:19