Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Effect of GaAs substrate on the magnetic properties of Ni film
Autore:
Haque, SA; Matsuo, A; Seino, Y; Yamamoto, Y; Yamada, S; Hori, H;
Indirizzi:
JAIST, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan JAIST Tatsunokuchi Ishikawa Japan 9231292 okuchi, Ishikawa 9231292, Japan
Titolo Testata:
PHYSICA B
fascicolo: 2, volume: 305, anno: 2001,
pagine: 121 - 126
SICI:
0921-4526(200111)305:2<121:EOGSOT>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILMS; SURFACE; DIFFUSION; EPITAXY; FE;
Keywords:
magnetization; temperature dependent hysteresis; Ni/GaAs; magnetic thin film; coercive field; remanent moment; hysteresis loop area;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Haque, SA JAIST, Sch Mat Sci, 1-1 Asahidai, Tatsunokuchi, Ishikawa 9231292, Japan JAIST 1-1 Asahidai Tatsunokuchi Ishikawa Japan 9231292 92, Japan
Citazione:
S.A. Haque et al., "Effect of GaAs substrate on the magnetic properties of Ni film", PHYSICA B, 305(2), 2001, pp. 121-126

Abstract

In this paper, temperature and field dependent magnetization processes of Ni films are studied. Polycrystalline Ni films are deposited on n-type GaAs(001) and Si (001) substrates by both the usual thermal evaporation and the UHV deposition in a MBE system. The roughness and the inherent oxide layer of the substrate are taken into consideration while preparing the Ni filmon GaAs substrate. For a comparative study, similar Ni films deposited on glass substrate and a bulk Ni sample are investigated as well. At low temperature, considerably large applied fields are required to gradually saturate the Ni/GaAs films.. starting from the end of the hysteresis. As an associate phenomenon, a large reduction of the remanent moment is observed. Coercive field as high as 71 mT is observed for this Ni film on GaAs substrate at 4.2 K. These anomalous magnetic behaviors are considered to be the effects of GaAs substrate, as they do not appear in Ni films deposited on Si substrate. glass substrate. and in the bulk Ni sample. A local anti ferro magnetic interaction among the Ni spins at the interface of Ni and GaAs has beenspeculated. This interaction becomes stronger as the temperature goes below the room temperature. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/07/20 alle ore 01:51:35