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Titolo:
Characterization of Cu(In1-xGax)Se-2 films prepared by three-stage coevaporation and their application to CIGS solar cells for a 14.48 % efficiency
Autore:
Kwon, SH; Lee, DY; Ahn, BT; Yoon, KH; Song, J;
Indirizzi:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea Korea Adv Inst Sci & Technol Taejon South Korea 305701 5701, South Korea Korea Inst Energy Res, New Energy Dept, Taejon 305343, South Korea Korea Inst Energy Res Taejon South Korea 305343 ejon 305343, South Korea
Titolo Testata:
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
fascicolo: 4, volume: 39, anno: 2001,
parte:, 1
pagine: 655 - 660
SICI:
0374-4884(200110)39:4<655:COCFPB>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
CUINSE2 THIN-FILMS; SURFACES; NA; LAYER; XPS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Kwon, SH Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701,South Korea Korea Adv Inst Sci & Technol Taejon South Korea 305701 th Korea
Citazione:
S.H. Kwon et al., "Characterization of Cu(In1-xGax)Se-2 films prepared by three-stage coevaporation and their application to CIGS solar cells for a 14.48 % efficiency", J KOR PHYS, 39(4), 2001, pp. 655-660

Abstract

An element coevaporation method was used to prepare Cu(In1-xGa)Se-2 (CIGS)films for absorbing layers of CIGS solar cells. Na diffusion from a soda-lime glass substrate into the CIGS film controlled the hole density to an order of 10(16) cm(-3) in the Cu-deficient composition and to an order of 10(15) cm(-3) in the Cu-rich composition. At the CIGS surface, Na was stronglyaccumulated and Se was deficient, indicating that the CIGS surface had a Na2Se-rich composition. As the Ga content increased, the bandgap of the CIGSfilm increased, but the optical transmittance near the band edge decreaseddue to scattering by small grains. The short-circuit current of the CdS/CIGS solar cell decreased continuously with increased Ga content. The open-circuit voltage and the fill factor were highest when the Ga content was near0.3. The highest efficiency, 14.48 %, was achieved in the 0.18-cm(2) CdS/CIGS cell with a composition of Cu-0.9(In0.7Ga0.3)Se-2.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/03/20 alle ore 00:47:30