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Titolo:
Atomic layer deposition of Ta(Al)N(C) thin films using trimethylaluminum as a reducing agent
Autore:
Alen, P; Juppo, M; Ritala, M; Sajavaara, T; Keinonen, J; Leskela, M;
Indirizzi:
Univ Helsinki, Inorgan Chem Lab, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 ab, FIN-00014 Helsinki, Finland Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Univ Helsinki, Dept Phys, Accelerator Lab, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 ab, FIN-00014 Helsinki, Finland
Titolo Testata:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
fascicolo: 10, volume: 148, anno: 2001,
pagine: G566 - G571
SICI:
0013-4651(200110)148:10<G566:ALDOTT>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; TANTALUM NITRIDE; COPPER METALLIZATION; DIFFUSION-BARRIER; TITANIUM NITRIDE; EPITAXY GROWTH; TOF-ERDA; TIN; LPCVD; TAN;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
42
Recensione:
Indirizzi per estratti:
Indirizzo: Alen, P Univ Helsinki, Inorgan Chem Lab, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 00014 Helsinki, Finland
Citazione:
P. Alen et al., "Atomic layer deposition of Ta(Al)N(C) thin films using trimethylaluminum as a reducing agent", J ELCHEM SO, 148(10), 2001, pp. G566-G571

Abstract

Ta(Al)N(C) thin films were deposited by the atomic layer deposition technique using TaCl5 or TaBr5 and NH3 as precursors and Al(CH3)(3) as an additional reducing agent. For comparison TaN thin films were deposited also from TaBr5 and NH3 with and without Zn. The films were analyzed by means of the time-of-flight elastic recoil detection analysis, energy dispersive X-ray spectroscopy. X-ray diffraction, and standard four-point probe method. The deposition temperature was varied between 250 and 400 degreesC. The films contained aluminum, carbon, hydrogen, and chlorine impurities. The chlorine content decreased drastically as the deposition temperature was increased. The film deposited at 400 degreesC contained less than 4 atom % chlorine andalso had the lowest resistivity, 1300 mu Omega cm. The barrier properties of the Cu/Ta(Al)N(C)/Si structure were studied by using sheet resistance and X-ray diffraction measurements. (C) 2001 The Electrochemical Society.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 19:07:54