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Titolo:
Design of a rapid thermal processing system using a reflection-resolved ray tracing method
Autore:
Habuka, H; Maruyama, K; Suzuki, T;
Indirizzi:
Yokohama Natl Univ, Fac Engn, Dept Mat Sci & Chem Engn, Kanagawa 2408501, Japan Yokohama Natl Univ Kanagawa Japan 2408501 Engn, Kanagawa 2408501, Japan
Titolo Testata:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
fascicolo: 10, volume: 148, anno: 2001,
pagine: G543 - G547
SICI:
0013-4651(200110)148:10<G543:DOARTP>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
RADIATIVE HEAT-TRANSFER; SILICON-THIN-FILM; VAPOR-DEPOSITION REACTOR; CIRCULAR INFRARED LAMP; EPITAXIAL-GROWTH; ATMOSPHERIC-PRESSURE; SEMICONDUCTOR WAFERS; SIHCL3-H-2 SYSTEM; MODEL-REDUCTION; SIMULATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
47
Recensione:
Indirizzi per estratti:
Indirizzo: Habuka, H Yokohama Natl Univ, Fac Engn, Dept Mat Sci & Chem Engn, Kanagawa2408501, Japan Yokohama Natl Univ Kanagawa Japan 2408501 agawa 2408501, Japan
Citazione:
H. Habuka et al., "Design of a rapid thermal processing system using a reflection-resolved ray tracing method", J ELCHEM SO, 148(10), 2001, pp. G543-G547

Abstract

The thermal condition of a silicon substrate in a rapid thermal processingsystem using circular infrared lamps and specular reflectors is systematically studied based on the direct approach model using a ray trace simulation with resolving the number of reflections, for the first time, in order toclarify the mechanism that the thermal condition for the silicon substrateis not sensitive to the distance between the circular infrared lamp and the reflector base plate forming the region behind the circular infrared lamp. Since total reflection from the specular reflectors behind the circular infrared lamp causes no energy loss on their surface, the intensity of the ray emitted from the infrared lamp toward the reflector base plate can be maintained and transported to the silicon substrate surface, even if the distance between the circular infrared lamp and the reflector base plate influences the path of the rays which are approaching the silicon substrate. Therefore, it is concluded that the thermal condition of the silicon substrate can be robust to the geometry of the specular reflectors behind the circular infrared lamp. (C) 2001 The Electrochemical Society.

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Documento generato il 20/09/20 alle ore 01:06:35