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Titolo:
Tin oxide thin films grown on the ((1)over-bar012) sapphire substrate
Autore:
Pan, XQ; Fu, L;
Indirizzi:
Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA Univ MichiganAnn Arbor MI USA 48109 Sci & Engn, Ann Arbor, MI 48109 USA
Titolo Testata:
JOURNAL OF ELECTROCERAMICS
fascicolo: 1, volume: 7, anno: 2001,
pagine: 35 - 46
SICI:
1385-3449(200110)7:1<35:TOTFGO>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
TRANSMISSION ELECTRON-MICROSCOPY; CHEMICAL-VAPOR-DEPOSITION; SNO2; SENSITIVITY; OXIDATION; SENSORS;
Keywords:
tin oxide; Sno; thin film; microstructure; TEM; electron beam deposition;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Pan, XQ Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA Univ Michigan Ann Arbor MI USA 48109 ngn, Ann Arbor, MI 48109 USA
Citazione:
X.Q. Pan e L. Fu, "Tin oxide thin films grown on the ((1)over-bar012) sapphire substrate", J ELECTROCE, 7(1), 2001, pp. 35-46

Abstract

Tin oxide thin films were deposited on the R-cut sapphire substrate by theelectron-beam evaporation of a ceramic SnO2 source. X-ray diffraction and transmission electron microscopy studies revealed that the films deposited at lower temperatures were amorphous while those grown at temperatures above 350 degreesC consisted of the alpha -SnO phase with the PbO type structure. Epitaxial alpha -SnO films on the R-cut sapphire substrate were obtainedwhen deposited at 600 degreesC. Atomic force microscopy studies showed that films deposited at low temperature have a smooth surface, while epitaxialSnO films deposited at high temperatures (above 600 degreesC) have a relatively rough surface. The atomic mobilities in the films at the various deposition temperatures and the lattice mismatch between the films and the substrates ultimately determine the microstructure and surface mophology. X-rayphotoelectron spectroscopy analysis shows that the Sn/O ratios are 52.7/47.6 for the amorphous film deposited at the ambient temperature (similar to 30 degreesC), 48.8/51.2 for the films deposited at 350 degreesC, and 49.2/50.8 for the epitaxial film deposited at 600 degreesC. Electrical propertieswere determined by four point probe measurements.

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Documento generato il 25/09/20 alle ore 22:51:40