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Titolo:
Crystallization kinetics of sputter-deposited amorphous AgInSbTe films
Autore:
Njoroge, WK; Wuttig, M;
Indirizzi:
Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany Rhein Westfal TH Aachen Aachen Germany D-52056 , D-52056 Aachen, Germany Kenyatta Univ, Dept Phys, Nairobi, Kenya Kenyatta Univ Nairobi KenyaKenyatta Univ, Dept Phys, Nairobi, Kenya Forschungszentrum Julich, ISG3, D-52428 Julich, Germany Forschungszentrum Julich Julich Germany D-52428 D-52428 Julich, Germany
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 8, volume: 90, anno: 2001,
pagine: 3816 - 3821
SICI:
0021-8979(20011015)90:8<3816:CKOSAA>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
IN-SB-TE; THIN-FILMS; PHASE-TRANSITIONS; OPTICAL DISK; HIGH-DENSITY; GE2SB2TE5; MEMORY; ALLOY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Njoroge, WK Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany Rhein Westfal TH Aachen Aachen Germany D-52056 chen, Germany
Citazione:
W.K. Njoroge e M. Wuttig, "Crystallization kinetics of sputter-deposited amorphous AgInSbTe films", J APPL PHYS, 90(8), 2001, pp. 3816-3821

Abstract

AgInSbTe films have recently attracted considerable interest as advanced materials for phase change recording. For this application the determinationof crystallization kinetics is of crucial importance. In this work the temperature dependence of structural and electrical properties of sputtered AgInSbTe films has been determined. Temperature dependent measurements of theelectrical resistance have been employed to study the kinetics of structural changes of these films. Upon annealing a major resistivity drop is observed at around 160 degreesC which can be attributed to a structural change as corroborated by x-ray diffraction. X-ray diffraction shows an amorphous phase for as-deposited films, while crystalline films with hexagonal structure (a = 4283 Angstrom, c = 16 995 Angstrom) are obtained upon annealing above 160 degreesC. By applying Kissinger's method, an activation energy of 3.03 +/- 0.17 eV is obtained for the crystallization. X-ray reflection measurements reveal a density increase of 5.2% +/- 0.2% and a thickness decrease of 5.5% +/- 0.2% upon crystallization. (C) 2001 American Institute of Physics.

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Documento generato il 24/09/20 alle ore 00:47:15