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Titolo:
(Ta1-xNbx)(2)O-5 films produced by atomic layer deposition: Temperature dependent dielectric spectroscopy and room-temperature I-V characteristics
Autore:
Stromme, M; Niklasson, GA; Ritala, M; Leskela, M; Kukli, K;
Indirizzi:
Univ Uppsala, Angstrom Lab, Dept Mat Sci, S-75121 Uppsala, Sweden Univ Uppsala Uppsala Sweden S-75121 ept Mat Sci, S-75121 Uppsala, Sweden Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland Univ Helsinki Helsinki Finland FIN-00014 em, FIN-00014 Helsinki, Finland Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 9, volume: 90, anno: 2001,
pagine: 4532 - 4542
SICI:
0021-8979(20011101)90:9<4532:(FPBAL>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
OXIDE THIN-FILMS; SOLID-SOLUTION; AL2O3 FILMS; CONSTANT; EPITAXY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
44
Recensione:
Indirizzi per estratti:
Indirizzo: Stromme, M Univ Uppsala, Angstrom Lab, Dept Mat Sci, POB 534, S-75121 Uppsala, Sweden Univ Uppsala POB 534 Uppsala Sweden S-75121 21 Uppsala, Sweden
Citazione:
M. Stromme et al., "(Ta1-xNbx)(2)O-5 films produced by atomic layer deposition: Temperature dependent dielectric spectroscopy and room-temperature I-V characteristics", J APPL PHYS, 90(9), 2001, pp. 4532-4542

Abstract

Temperature dependent ac dielectric spectroscopy and room-temperature I-V characterization were performed on atomic layer deposited (Ta1-xNbx)(2)O-5 films. The high frequency permittivity, as well as the dc conductivity of the films, were found to increase with increasing Nb content. The conductionmechanism in the mixed Ta-Nb oxide films was of the Poole-Frenkel type, while the high field conduction in pure Ta2O5 was space-charge limited. The activation energy for dc conduction was higher in mixed Ta-Nb oxides compared to pure Ta2O5 and Nb2O5 films. Irreversible changes in the conduction mechanism took place upon heat treatment above a certain irreversibility temperature. This temperature was higher for the mixed oxides than for the binary ones. (C) 2001 American Institute of Physics.

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Documento generato il 22/09/20 alle ore 23:45:57