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Titolo:
Steady state oxygen surface content in oxygen sputtered silicon at impact energy of 5 keV per atom
Autore:
Serrano, JJ; Blanco, JM; Guzman, B; De Witte, H; Vandervorst, W;
Indirizzi:
Univ Politecn Madrid, ETSI Telecommun, E-28040 Madrid, Spain Univ PolitecnMadrid Madrid Spain E-28040 ecommun, E-28040 Madrid, Spain IMEC, B-3001 Louvain, Belgium IMEC Louvain Belgium B-3001IMEC, B-3001 Louvain, Belgium Katholieke Univ Leuven, INSYS, Louvain, Belgium Katholieke Univ Leuven Louvain Belgium Leuven, INSYS, Louvain, Belgium
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 9, volume: 90, anno: 2001,
pagine: 4456 - 4466
SICI:
0021-8979(20011101)90:9<4456:SSOSCI>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
ION-BOMBARDMENT; EMISSION; ANGLE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Serrano, JJ Univ Politecn Madrid, ETSI Telecommun, Ciudad Univ, E-28040 Madrid, Spain Univ Politecn Madrid Ciudad Univ Madrid Spain E-28040 , Spain
Citazione:
J.J. Serrano et al., "Steady state oxygen surface content in oxygen sputtered silicon at impact energy of 5 keV per atom", J APPL PHYS, 90(9), 2001, pp. 4456-4466

Abstract

A method is presented for the calculation of the oxygen surface concentration in steady state when sputtering silicon and silicon oxides with oxygen ions. The case of sputtering with 5 keV oxygen atoms as a function of incidence angle has been studied. Measurements of erosion rates under the mentioned sputtering conditions, including oxygen and noble gases as primary ions, with and without oxygen flooding, are the input data. The dependence of the component sputtering yield of silicon on the oxygen surface concentration is also obtained, as well as the preferential sputtering ratio. These quantities, from the point of view of the calculation work frame, depend on the degree of oxygen supersaturation (oxygen atomic fraction >2/3) at the surface in normal incidence. The possibility of supersaturation is a result ofour assumptions and its level can be estimated within a narrow range. (C) 2001 American Institute of Physics.

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Documento generato il 21/09/20 alle ore 18:45:06