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Titolo:
Effect of annealing on electrical properties of Pt/beta-SiC contact
Autore:
Na, HJ; Jeong, JK; Um, MY; Kim, BS; Hwang, CS; Kim, HJ;
Indirizzi:
Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea Seoul Natl Univ Seoul South Korea 151742 Engn, Seoul 151742, South Korea
Titolo Testata:
SOLID-STATE ELECTRONICS
fascicolo: 9, volume: 45, anno: 2001,
pagine: 1565 - 1570
SICI:
0038-1101(200109)45:9<1565:EOAOEP>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON; FILMS;
Keywords:
beta-SiC; Pt contact; sputter damage; interface trap;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, HJ Seoul Natl Univ, Sch Mat Sci & Engn, San 56-1, Seoul 151742, SouthKorea Seoul Natl Univ San 56-1 Seoul South Korea 151742 42, South Korea
Citazione:
H.J. Na et al., "Effect of annealing on electrical properties of Pt/beta-SiC contact", SOL ST ELEC, 45(9), 2001, pp. 1565-1570

Abstract

The property of contacts on semiconductors, which are deposited and annealed in high temperatures, is significantly affected by the annealing condition. SiC is one of the most attractive semiconductors applied in high temperature devices. In this study, the possibility of Pt being used as Schottky contact on SiC was examined by investigating the effects of annealing on the electrical properties of Pt/beta -SiC contact. The as-deposited Pt/n-typebeta -SiC contacts showed ohmic property, which is attributed to the donor-like traps at the interface due to the sputtering damage. On the other hand, after annealing the contacts showed Schottky property, which seems to beoriginated from the annealing of traps and the movement of the junction into the defect-free SiC film during annealing. The barrier height increased with increasing annealing temperature, showing 1.37 eV at the annealing temperature of 900 degreesC. (C) 2001 Elsevier Science Ltd. All rights reserved.

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Documento generato il 02/06/20 alle ore 01:45:27