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Titolo:
Carbonization process of Si(100) by ion-beam bombardment
Autore:
Liao, MY; Chai, CL; Yao, ZY; Yang, SY; Liu, ZK; Wang, ZG;
Indirizzi:
Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 100083, Peoples R China
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 3, volume: 233, anno: 2001,
pagine: 446 - 450
SICI:
0022-0248(200112)233:3<446:CPOSBI>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
CUBIC GAN; GROWTH; DEPOSITION; EPITAXY; SILICON; DIAMOND;
Keywords:
diffusion; growth models; ion bombardment; reflection high energy electron diffraction; physical vapor phase deposition; semiconducting silicon compounds;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Liao, MY Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 Peoples R China
Citazione:
M.Y. Liao et al., "Carbonization process of Si(100) by ion-beam bombardment", J CRYST GR, 233(3), 2001, pp. 446-450

Abstract

The evolution of carbonization process on Si as a function of ion dose hasbeen carried out by mass-selected ion-beam deposition technique. 3C-SiC layer has been obtained at low ion dose, which has been observed by reflection high energy electron diffraction and X-ray photoelectron spectroscopy (XPS). The chemical states of Si and carbon have also been examined as a function of ion dose by XPS. Carbon enrichment was found regardless of the used ion dose here, which may be due to the high deposition rate. The formation mechanism of SiC has also been discussed based on the subplantation process. The work will also provide further understanding of the ion-bombardment effect. (C) 2001 Published by Elsevier Science B.V.

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Documento generato il 03/07/20 alle ore 21:34:17