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Titolo:
High power In0.49Ga0.51P/In0.15Ga0.85As heterostructure doped-channel FETs
Autore:
Chiu, HC; Yang, SC; Chan, YJ; Lin, HH;
Indirizzi:
Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan Natl Cent Univ Chungli Taiwan 32054 pt Elect Engn, Chungli 32054, Taiwan Natl Taiwan Univ, Dept Elect Engn, Chungli 32054, Taiwan Natl Taiwan UnivChungli Taiwan 32054 Elect Engn, Chungli 32054, Taiwan
Titolo Testata:
IEICE TRANSACTIONS ON ELECTRONICS
fascicolo: 10, volume: E84C, anno: 2001,
pagine: 1312 - 1317
SICI:
0916-8524(200110)E84C:10<1312:HPIHDF>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
HIGH-EFFICIENCY; PERFORMANCE; DESIGN; HEMTS; HFETS;
Keywords:
DCFET; InGaP; power; performance; RIE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Yang, SC Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan Natl Cent Univ Chungli Taiwan 32054 Engn, Chungli 32054, Taiwan
Citazione:
H.C. Chiu et al., "High power In0.49Ga0.51P/In0.15Ga0.85As heterostructure doped-channel FETs", IEICE TR EL, E84C(10), 2001, pp. 1312-1317

Abstract

A high barrier Schottky gate on InGaP/InGaAs doped-channel FETs (DCFETs) provides a high current density, high gate-to-drain breakdown voltage and a better linear operation over a wide gate bias range. However, these doped-channel devices are limited by a large parasitic resistance associated with a 20 nm thick undoped InGaP layer beneath the gate metal. In this study, weinserted a Si delta -doped layer inside this high bandgap undoped InGaP layer to reduce parasitic resistances and to enhance device DC and RF power performance. These modified DCFETs (M-DCFETs) demonstrated an output power density of 204 mW/mm, a power-added efficiency of 45%, and a linear power gain of 18.3 dB for an 1 mm gate-width device under a 2.4 GHz operation. These characteristics suggest that doped-channel FETs with a Si delta -doped layer provide a good potential for high power microwave device applications.

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Documento generato il 14/07/20 alle ore 11:19:25