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Titolo:
Enhanced CW performance of the interband cascade laser using improved device fabrication
Autore:
Bradshaw, JL; Pham, JT; Yang, RQ; Bruno, JD; Wortman, DE;
Indirizzi:
USA, Res Lab, Adelphi, MD 20783 USA USA Adelphi MD USA 20783USA, Res Lab, Adelphi, MD 20783 USA
Titolo Testata:
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
fascicolo: 2, volume: 7, anno: 2001,
pagine: 102 - 105
SICI:
1077-260X(200103/04)7:2<102:ECPOTI>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
CONTINUOUS-WAVE OPERATION; QUANTUM-WELLS; HEAT-SINKING;
Keywords:
diode lasers; mid-infrared; quantum-well lasers; semiconductor superlattices; thermal factors;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
28
Recensione:
Indirizzi per estratti:
Indirizzo: Bradshaw, JL USA, Res Lab, Adelphi, MD 20783 USA USA Adelphi MD USA 20783USA, Res Lab, Adelphi, MD 20783 USA
Citazione:
J.L. Bradshaw et al., "Enhanced CW performance of the interband cascade laser using improved device fabrication", IEEE S T QU, 7(2), 2001, pp. 102-105

Abstract

Continuous-wave (CW) operation of a mid-infrared type-II interband cascade(IQ laser has been demonstrated at temperatures up to 142 K by improving device processing and fabrication. Also, the IC laser exhibited record-high wall-plug efficiencies (similar to 18 % at 60 K) with considerable CW output powers. An analysis of the thermal resistance partially explains the still low maximum CW operating temperature and suggests further potential for improvement with continued development of fabrication/packaging techniques.

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Documento generato il 24/10/20 alle ore 11:02:13