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Titolo:
Enhanced degradation in polycrystalline silicon thin-film transistors under dynamic hot-carrier stress
Autore:
Chang, KM; Chung, YH; Lin, GM; Deng, CG; Lin, JH;
Indirizzi:
Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan Natl Chiao Tung Univ Hsinchu Taiwan v, Dept Elect Engn, Hsinchu, Taiwan Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan Natl Chiao Tung Univ Hsinchu Taiwan g Univ, Inst Elect, Hsinchu, Taiwan
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 10, volume: 22, anno: 2001,
pagine: 475 - 477
SICI:
0741-3106(200110)22:10<475:EDIPST>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
POLYSILICON;
Keywords:
channel shortening effect; intra-grain bulk states; polysilicon thin-film transistors (poly-Si TFTs); tail states; transconductance (G(m) (max));
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Chang, KM Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan Natl Chiao Tung Univ Hsinchu Taiwan ect Engn, Hsinchu, Taiwan
Citazione:
K.M. Chang et al., "Enhanced degradation in polycrystalline silicon thin-film transistors under dynamic hot-carrier stress", IEEE ELEC D, 22(10), 2001, pp. 475-477

Abstract

We address the mechanisms responsible for the enhanced degradation in the polysilicon thin-film transistors under dynamic hot-carrier stress. Unlike the monotonic decrease of maximum transconductance (G(m max)) in static stress, G(m max) in dynamic stress is initially increased due to the channel shortening effect by holes injected into the gate oxide near the drain region and then decreased due to tail states generation at the gate oxide/channel interface and grain boundaries. The threshold voltage variations are dominated by two degradation mechanisms: 1) breaking of weak bonds and 2) breaking of strong bonds to obey the power-time dependence law with a slope of 0.4. The degradation of the sub-threshold slope is attributed to intra-grainbulk states generation.

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Documento generato il 30/11/20 alle ore 12:35:00