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Titolo:
Influence of structure development on atomic layer deposition of TiO2 thinfilms
Autore:
Aarik, J; Karlis, J; Mandar, H; Uustare, T; Sammelselg, V;
Indirizzi:
Univ Tartu, Inst Sci Mat, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 Inst Sci Mat, EE-51010 Tartu, Estonia Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia Univ Tartu Tartu Estonia EE-51014 tu, Inst Phys, EE-51014 Tartu, Estonia
Titolo Testata:
APPLIED SURFACE SCIENCE
fascicolo: 3-4, volume: 181, anno: 2001,
pagine: 339 - 348
SICI:
0169-4332(20010921)181:3-4<339:IOSDOA>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
TITANIUM ETHOXIDE; GROWTH; EPITAXY; TEMPERATURE; WATER;
Keywords:
atomic layer deposition; titanium dioxide; crystallization; surface morphology; adsorption;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Aarik, J Univ Tartu, Inst Sci Mat, Tahe 4, EE-51010 Tartu, Estonia Univ Tartu Tahe 4 Tartu Estonia EE-51010 EE-51010 Tartu, Estonia
Citazione:
J. Aarik et al., "Influence of structure development on atomic layer deposition of TiO2 thinfilms", APPL SURF S, 181(3-4), 2001, pp. 339-348

Abstract

Microstructure of titanium dioxide (TiO2) thin films grown in the atomic layer deposition (ALD) process from titanium ethoxide (Ti(OCH2CH3)(4)) and water (H2O) vapor was studied. It was revealed that formation of crystalline(anatase) phase in the films at 200 degreesC and higher substrate temperatures resulted in considerable surface roughening and increase in the growthrate. The effect most markedly contributed to the film growth at 200 degreesC. At this temperature, the average growth rate increased 1.4 times with the increase of film thickness from about 100 to 280 nm. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 28/11/20 alle ore 12:14:52