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Titolo:
Rapid crystallization of silicon films using Joule heating of metal films
Autore:
Sameshima, T; Kaneko, Y; Andoh, N;
Indirizzi:
Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan Tokyo Univ Agr & Technol Koganei Tokyo Japan 1848588 Tokyo 1848588, Japan
Titolo Testata:
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
fascicolo: 4, volume: 73, anno: 2001,
pagine: 419 - 423
SICI:
0947-8396(200110)73:4<419:RCOSFU>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
POLY-SI TFTS; ELECTRICAL-PROPERTIES; THIN-FILMS; LASER; CVD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Sameshima, T Tokyo Univ Agr & Technol, 2-24-16 Nakamachi, Koganei, Tokyo 1848588, Japan Tokyo Univ Agr & Technol 2-24-16 Nakamachi Koganei Tokyo Japan 1848588
Citazione:
T. Sameshima et al., "Rapid crystallization of silicon films using Joule heating of metal films", APPL PHYS A, 73(4), 2001, pp. 419-423

Abstract

50-nm thick amorphous silicon films formed on glass substrates were crystallized by rapid Joule heating induced by an electrical current flowing in 100-nm-thick Cr strips formed adjacently to 200-nm-thick SiO2 intermediate layers. 3-mus-pulsed voltages were applied to the Cr strips. Melting of the Cr strips caused a high Joule heating intensity of about 1 x 10(6) W/cm(2). Raman scattering measurements revealed complete crystallization of the silicon films at a Joule heating energy of 1.9 J/cm(2) via the SiO2 intermediate layer. Transmission electron microscopy measurements confirmed a crystalline grain size of 50-100 nm. 1-mum-long crystalline grain growth was also observed just beneath the edge of the Cr strips. The electrical conductivity increased from 10(-5) S/cm to 0.3 S/cm for 7 x 10(17)-cm(-3)-phosphorus-doped silicon films because of activation of the phosphorus atoms because ofcrystallization. The numerical analysis showed a density of localized defect states at the mid gap of 8.0 x 10(17) cm(-3). Oxygen plasma treatment at250 degreesC and 100 W for 5 min reduced the density of the defect states to 2.7 x 10(17) cm(-3).

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Documento generato il 04/12/20 alle ore 09:33:53