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Titolo:
High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda=3.3 mu m)
Autore:
Aydaraliev, M; Zotova, NV; Karandashev, SA; Matveev, BA; Remennyi, MA; Stus, NM; Talalakin, GN;
Indirizzi:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci St Petersburg Russia 194021 t Petersburg 194021, Russia
Titolo Testata:
SEMICONDUCTORS
fascicolo: 10, volume: 35, anno: 2001,
pagine: 1208 - 1212
SICI:
1063-7826(2001)35:10<1208:HPIDHL>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
WELL DIODE-LASERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Aydaraliev, M Russian Acad Sci, AF Ioffe Physicotech Inst, Politekhnicheskaya Ul 26, St Petersburg 194021, Russia Russian Acad Sci PolitekhnicheskayaUl 26 St Petersburg Russia 194021
Citazione:
M. Aydaraliev et al., "High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda=3.3 mu m)", SEMICONDUCT, 35(10), 2001, pp. 1208-1212

Abstract

InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda = 3.3 mum, T = 77 K) yield a multimode power of 1.56 W in pulsed operation (pulse width 30mus, repetition frequency f = 500 Hz) and 160 mW in the continuous-wave (CW) case. In the single-mode CW operation, the power is 18.7 mW. It is shownthat heating of the active region is responsible for sublinear light-current characteristics in "long-cavity" lasers, whereas in "short-cavity" (L = 140-300 mum) lasers the power is mainly limited by internal losses. (C) 2001 MAIK "Nauka/Interperiodica".

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/09/20 alle ore 23:53:17