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Titolo:
Multiaxial channeling study of disorder accumulation and recovery in gold-irradiated 6H-SiC - art. no. 125206
Autore:
Jiang, W; Weber, WJ;
Indirizzi:
Battelle Mem Inst, Pacific NW Natl Lab, Richland, WA 99352 USA Battelle Mem Inst Richland WA USA 99352 Natl Lab, Richland, WA 99352 USA
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 12, volume: 6412, anno: 2001,
pagine: 5206 -
SICI:
0163-1829(20010915)6412:12<5206:MCSODA>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
INDUCED AMORPHIZATION; ANNEALING BEHAVIOR; SILICON-CARBIDE; LATTICE DISPLACEMENTS; IMPLANTED GAN; IN-SITU; ION; DAMAGE; TEMPERATURE; CERAMICS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
45
Recensione:
Indirizzi per estratti:
Indirizzo: Jiang, W Battelle Mem Inst, Pacific NW Natl Lab, MSIN K8-93,POB 999, Richland, WA 99352 USA Battelle Mem Inst MSIN K8-93,POB 999 Richland WA USA 99352 52 USA
Citazione:
W. Jiang e W.J. Weber, "Multiaxial channeling study of disorder accumulation and recovery in gold-irradiated 6H-SiC - art. no. 125206", PHYS REV B, 6412(12), 2001, pp. 5206

Abstract

Single crystal 6H-SiC has been irradiated 60 degrees off normal with 2 MeVAu2+ ions at 300 K to fluences of 0.029, 0.058, and 0.12 ions/nm(2), whichproduced relatively tow damage levels. The disorder profiles as a functionof ion fluence on both the Si and C sublattices have been determined simultaneously in situ using Rutherford backscattering and nuclear reaction analysis with 0.94 MeV D+ ions in channeling geometry along the [0001], [1 (1) over bar 02], and [10 (1) over bar1] axes. Along the [0001] axis at these low doses, similar levels of Si and C disorder are observed, and the damage accumulation is linear with dose. However, along (1 (1) over bar 02) and [10 (1) over bar1], the disorder accumulation is larger and increases sublinearly with dose. Furthermore, a higher level of C disorder than Si disorder is observed along the [1 (1) over bar 02] and [10 (1) over bar1] axes, which is consistent with a smaller threshold displacement energy on the C sublattice in SiC. The mean lattice displacement, perpendicular to each corresponding axis, ranges from 0.014 to 0.037 nn for this range of ion fluences. Asteady accumulation of small displacements due to lattice stress is observed along the [10 (1) over bar1] axis, and a detectable reduction of the lattice stress perpendicular to the [0001] axis occurs at 0.12 Au2+/nm(2). There is only a moderate recovery of disorder, produced at and below 0.058 Au2/nm(2), during thermal annealing at 570 K; more significant recovery is observed for 0.12 Au2+/nm(2) along both the [0001] and [1 (1) over bar 02] axes.

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Documento generato il 22/01/20 alle ore 06:50:12