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Titolo:
The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors
Autore:
Hicks, RF; Fu, Q; Li, L; Visbeck, SB; Sun, Y; Li, CH; Law, DC;
Indirizzi:
Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA Univ Calif Los Angeles Los Angeles CA USA 90095 Los Angeles, CA 90095 USA
Titolo Testata:
JOURNAL DE PHYSIQUE IV
fascicolo: PR3, volume: 11, anno: 2001,
pagine: 31 - 37
SICI:
1155-4339(200108)11:PR3<31:TROASS>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHASE EPITAXY; GAAS(001);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Hicks, RF Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA Univ Calif Los Angeles Los Angeles CA USA 90095 s, CA 90095 USA
Citazione:
R.F. Hicks et al., "The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors", J PHYS IV, 11(PR3), 2001, pp. 31-37

Abstract

The atomic structure of gallium arsenide and indium phosphide (001) surfaces in the metalorganic chemical vapor deposition (MOCVD) environment has been characterized in situ by scanning tunneling microscopy and infrared spectroscopy. During growth at V/III ratios above 10, these films exhibit similar surface structures. They are terminated with alkyl groups, hydrogen atoms and group V dimers (As or P) adsorbed on top of a complete layer of groupV atoms. As the V/III ratio decreases, the exposed arsenic and phosphorousatoms desorb from the surface. On gallium arsenide, this occurs through a phase transition, involving gallium out-diffusion and surface roughening. By contrast, on InP, the underlying phosphorous atoms simply form rows of dimers, yielding a smooth, continuous layer.

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Documento generato il 05/07/20 alle ore 07:10:54