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Titolo:
The room temperature ammonia sensor based on improved CuxS-micro-porous-Sistructure
Autore:
Setkus, A; Galdikas, A; Mironas, A; Strazdiene, V; Simkiene, I; Ancutiene, L; Janickis, V; Kaciulis, S; Mattogno, G; Ingo, GM;
Indirizzi:
Inst Semicond Phys, LT-2600 Vilnius, Lithuania Inst Semicond Phys Vilnius Lithuania LT-2600 LT-2600 Vilnius, Lithuania Kaunas Univ Technol, LT-3006 Kaunas, Lithuania Kaunas Univ Technol Kaunas Lithuania LT-3006 , LT-3006 Kaunas, Lithuania CNR, Ist Chim Mat, I-00016 Monterotondo, RM, Italy CNR Monterotondo RM Italy I-00016 im Mat, I-00016 Monterotondo, RM, Italy
Titolo Testata:
SENSORS AND ACTUATORS B-CHEMICAL
fascicolo: 1-3, volume: 78, anno: 2001,
pagine: 208 - 215
SICI:
0925-4005(20010830)78:1-3<208:TRTASB>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAS; FILMS;
Keywords:
gas sensors; room temperature; ammonia; copper sulphide;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Setkus, A Inst Semicond Phys, A Gostauto 11, LT-2600 Vilnius, Lithuania Inst Semicond Phys A Gostauto 11 Vilnius Lithuania LT-2600 ania
Citazione:
A. Setkus et al., "The room temperature ammonia sensor based on improved CuxS-micro-porous-Sistructure", SENS ACTU-B, 78(1-3), 2001, pp. 208-215

Abstract

Ammonia sensitive structures based on CuxS film and micro-porous Si layer are produced and investigated. Resistance response to ammonia is measured in air at ambient temperatures 290-300 K and at higher ones with special heating up to 350 K. Detectable amount is from 2 ppm to few percents of ammonia in air at the ambient temperatures. The response signal increases linearly with an increase of the amount up to 100 ppm. The response signal is independent on the operation temperature < 320 K. The resistance response decreases if the relative humidity increases from 18 to 100%. Surface chemical composition and morphology of the sensitive structures are analysed. High sensitivity of the sensors is related with specific morphology of the CuxS films on the micro-porous Si. The sensitivity mechanism is related with a dependence of the hole conductance on the gas-surface interaction in the CuxS films. (C) 2001 Elsevier Science B.V. Ail rights reserved.

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Documento generato il 29/11/20 alle ore 09:28:25