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Titolo:
Micromorphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH and TMAH
Autore:
van Veenendaal, E; Sato, K; Shikida, M; van Suchtelen, J;
Indirizzi:
Catholic Univ Nijmegen, RIM Dept Solid State Chem, NL-6525 ED Nijmegen, Netherlands Catholic Univ Nijmegen Nijmegen Netherlands NL-6525 ED egen, Netherlands Nagoya Univ, Dept Micro Syst Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan Nagoya Univ Nagoya Aichi Japan 46401 ikusa Ku, Nagoya, Aichi 46401, Japan Univ Twente, MESA Res Inst, NL-7500 AE Enschede, Netherlands Univ Twente Enschede Netherlands NL-7500 AE 500 AE Enschede, Netherlands
Titolo Testata:
SENSORS AND ACTUATORS A-PHYSICAL
fascicolo: 3, volume: 93, anno: 2001,
pagine: 219 - 231
SICI:
0924-4247(20011015)93:3<219:MOSCSS>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
WATER SOLUTION; ORIENTATION;
Keywords:
anisotropic etching; silicon; surface morphology;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: van Veenendaal, E Catholic Univ Nijmegen, RIM Dept Solid State Chem, Toernooiveld, NL-6525 ED Nijmegen, Netherlands Catholic Univ Nijmegen Toernooiveld Nijmegen Netherlands NL-6525 ED
Citazione:
E. van Veenendaal et al., "Micromorphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH and TMAH", SENS ACTU-A, 93(3), 2001, pp. 219-231

Abstract

An optical microscopy study is presented of the micromorphology of siliconsurfaces etched in KOH and TMAH, using large hemispherical specimen on which all possible surface orientations are present. Many of the features found on the silicon surfaces can be correlated with features of the etch rate as a function of surface orientation. The topics that are treated include: triangular and hexagonal shaped etch pits on Si{1 1 1}, spherical depressions and the occurrence of pyramidal protrusions on Si{1 0 0}, the occurrenceof staircase or zigzag structures on Si{1 1 0} and the morphology of the transition regions between these three main silicon surfaces. Nowhere on anyof the etched silicon hemispheres microscopically smooth surfaces can be observed. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 27/05/20 alle ore 15:29:06