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Titolo:
Cross-section preparation for transmission electron microscopy of phases and interfaces in C/BN heterostructures
Autore:
Reznik, B; Kalhofer, S;
Indirizzi:
Univ Karlsruhe, Inst Chem Tech, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany Univ Karlsruhe Karlsruhe Germany D-76128 pie, D-76128 Karlsruhe, Germany
Titolo Testata:
MICRON
fascicolo: 1, volume: 33, anno: 2002,
pagine: 105 - 109
SICI:
0968-4328(2002)33:1<105:CPFTEM>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
SAMPLE PREPARATION; TRANSMITTED COLOR; ION-BEAM; TEM; SILICON; CARBON;
Keywords:
carbon; boron nitride; silicon; color; TEM sample preparation;
Tipo documento:
Review
Natura:
Periodico
Settore Disciplinare:
Life Sciences
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Reznik, B Univ Karlsruhe, Inst Chem Tech, Lab Elektronenmikroskopie, Kaiserstr 12, D-76128 Karlsruhe, Germany Univ Karlsruhe Kaiserstr 12 Karlsruhe Germany D-76128 , Germany
Citazione:
B. Reznik e S. Kalhofer, "Cross-section preparation for transmission electron microscopy of phases and interfaces in C/BN heterostructures", MICRON, 33(1), 2002, pp. 105-109

Abstract

A technique is described for the preparation of transmission electron microscopy cross-sectional samples of pyrolytical carbon layers deposited on polycrystalline boron nitride substrates. To solve the problem of different abrasion rates of C and BN a filler material, Si wafers, has been bonded to both sides of the pre-thinned BN substrate. Correspondence between color and thickness of Si wafers facilitates controlled sample thickness reduction during dimpling. The samples prepared by this technique even without ion milling are thin enough for HRTEM studies. (C) 2001 Elsevier Science Ltd. Allrights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/10/20 alle ore 16:09:04