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Titolo:
Structural analysis of sol-gel-derived LaNiO3(100)/CeO2(100)/Si(100) heterostructures
Autore:
Fujihara, S; Miyake, S; Kimura, T; Inaba, K;
Indirizzi:
Keio Univ, Fac Sci & Technol, Dept Appl Chem, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan Keio Univ Yokohama Kanagawa Japan 2238522 kohama, Kanagawa 2238522, Japan Rigaku Corp, Xray Res Lab, Akishima, Tokyo 1968666, Japan Rigaku Corp Akishima Tokyo Japan 1968666 , Akishima, Tokyo 1968666, Japan
Titolo Testata:
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
fascicolo: 9, volume: 109, anno: 2001,
pagine: 793 - 797
SICI:
0914-5400(200109)109:9<793:SAOSLH>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; THIN-FILMS; DEPOSITION; LAYERS;
Keywords:
CeO2; LaNiO3; heterostructure; orientation; sol-gel method; X-ray diffraction;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Fujihara, S Keio Univ, Fac Sci & Technol, Dept Appl Chem, Kohoku Ku, 3-14-1 Hiyoshi, Yokohama, Kanagawa 2238522, Japan Keio Univ 3-14-1 Hiyoshi Yokohama Kanagawa Japan 2238522 Japan
Citazione:
S. Fujihara et al., "Structural analysis of sol-gel-derived LaNiO3(100)/CeO2(100)/Si(100) heterostructures", J CERAM S J, 109(9), 2001, pp. 793-797

Abstract

LaNiO3 (100) /CeO2 (100) /Si (100) as a metal/insulator/semiconductor heterostructure was prepared by a sol-gel method with a spin-coating technique. The structure of each oxide layer was investigated by out-of-plane and in-plane X-ray diffraction analyses. The high degree of {100}-orientation of the CeO2 layers was obtained with higher heat treatment temperatures, 600-700 degreesC. The in-plane measurements revealed that the CeO2 layers had a nonepitaxial structure in spite of the deposition on the Si (100) substrateswith good lattice compatibility. The LaNiO3 layers on the CeO2 (100) /Si (100) also exhibited the preferential {100}-orientation without epitaxy. Thecrystallinity of the {100}-oriented grains in the LaNiO3 layers was higherthan that in the CeO2 layers. The occurrence of the orientation was discussed in view of the interfacial energies at each interface.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/07/20 alle ore 01:45:09