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Titolo:
Effect of the thickness of SiO2 under layer on the initial stage of epitaxial growth process of yttria-stabilized zirconia (YSZ) thin film deposited on Si(001) substrate
Autore:
Ishigaki, H; Yamada, T; Wakiya, N; Shinozaki, K; Mizutani, N;
Indirizzi:
Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci, Meguro Ku, Okayama 1528552, Japan Tokyo Inst Technol Okayama Japan 1528552 guro Ku, Okayama 1528552, Japan
Titolo Testata:
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
fascicolo: 9, volume: 109, anno: 2001,
pagine: 766 - 770
SICI:
0914-5400(200109)109:9<766:EOTTOS>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
PULSED-LASER DEPOSITION; BUFFER LAYERS; HETEROEPITAXIAL GROWTH; ELECTRON-MICROSCOPY; NATIVE SIO2; SILICON 100; SI(100); INTERFACE; OXIDES; ZRO2;
Keywords:
Si; SiO2; YSZ; RHEED; epitaxial; PLD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
39
Recensione:
Indirizzi per estratti:
Indirizzo: Ishigaki, H Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Met & Ceram Sci,Meguro Ku, 2-12-1,O Okayama, Okayama 1528552, Japan Tokyo Inst Technol 2-12-1,O Okayama Okayama Japan 1528552 pan
Citazione:
H. Ishigaki et al., "Effect of the thickness of SiO2 under layer on the initial stage of epitaxial growth process of yttria-stabilized zirconia (YSZ) thin film deposited on Si(001) substrate", J CERAM S J, 109(9), 2001, pp. 766-770

Abstract

Epitaxial growth of yttria-stabilized zirconia (YSZ) thin films on Si (001) substrates containing SiO2 layers of various thickness was in-situ monitored by reflection high-energy electron diffraction (RHEED). The inplane lattice parameter of YSZ at the initial stage of the deposition (the thicknessof YSZ was below 5 nm), was very close to that of the Si substrate when the thickness Of SiO2 was below 0.49 nm. The in-plane lattice parameter of YSZ was significantly decreased approaching that of bulk YSZ when the thickness of YSZ was over 5 nm. The relaxation of the lattice parameter was causedby the generation of misfit dislocations or regrowth of SiO2 between the Si and YSZ interface. On the contrary, if the thickness of SiO2 was between 0.68 and 1.1 nm, the epitaxial growth was also confirmed, however, the in-plane lattice parameter did not change with the thickness of YSZ. The reasonfor the change of this lattice relaxation with the thickness of SiO2 was discussed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/09/20 alle ore 05:36:58