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Titolo:
Highest efficiency, linear X-band performance using InP DHBTs-48% PAE at 30 dB C/IM3
Autore:
Kehias, L; Jenkins, T; Quach, T; Watson, P; Welch, R; Worley, R; Oki, AK; Yen, HC; Gutierrez-Aitken, A; Okamura, W; Kaneshiro, E;
Indirizzi:
USAF, AFRL, SNDM, Wright Patterson AFB, OH 45433 USA USAF Wright Patterson AFB OH USA 45433 Wright Patterson AFB, OH 45433 USA TRW Co Inc, Elect & Technol Div, Redondo Beach, CA 90278 USA TRW Co Inc Redondo Beach CA USA 90278 ol Div, Redondo Beach, CA 90278 USA
Titolo Testata:
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
fascicolo: 9, volume: 11, anno: 2001,
pagine: 361 - 363
SICI:
1531-1309(200109)11:9<361:HELXPU>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
HBT;
Keywords:
InP DHBT; intermodulation distortion; linear efficiency; linear HBT; linear power amplifier;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
3
Recensione:
Indirizzi per estratti:
Indirizzo: Kehias, L USAF, AFRL, SNDM, Wright Patterson AFB, OH 45433 USA USAF Wright Patterson AFB OH USA 45433 terson AFB, OH 45433 USA
Citazione:
L. Kehias et al., "Highest efficiency, linear X-band performance using InP DHBTs-48% PAE at 30 dB C/IM3", IEEE MICR W, 11(9), 2001, pp. 361-363

Abstract

InP single heterojunction bipolar transistors have previously demonstrated5-10 dB lower third-order intermodulation products (IM3) compared to GaAs heterojunction bipolar transistors (HBTs) under low voltage (2 V) operation[1]. This paper reports excellent single-tone and two-tone X-band operation, including high two-tone power-added efficiency (PAE), on linear InP double heterojunction bipolar transistors (DHBTs) operated at V-ce = 4 V. The InP DHBT demonstrated a 30 dB carrier to third-order intermodulation product(C/IM3) output power ratio simultaneously with 48% two-tone PAE. This is the highest known efficiency of an X-band device under linear (30 dB C/IM3) operation. This is especially significant for microwave power amplifiers for satellite communication transmitters, where lower intermodulation distortion is normally accomplished by backing off in RF drive and output power, thus sacrificing PAE performance.

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Documento generato il 30/03/20 alle ore 07:58:57