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Titolo:
Effect of light-induced metastable defects on photocarrier lifetime
Autore:
Kodolbas, AO; Eray, A; Oktu, O;
Indirizzi:
Hacettepe Univ, Dept Engn Phys, TR-06532 Ankara, Turkey Hacettepe Univ Ankara Turkey TR-06532 Engn Phys, TR-06532 Ankara, Turkey
Titolo Testata:
SOLAR ENERGY MATERIALS AND SOLAR CELLS
fascicolo: 4, volume: 69, anno: 2001,
pagine: 325 - 337
SICI:
0927-0248(200111)69:4<325:EOLMDO>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
A-SI-H; HYDROGENATED AMORPHOUS-SILICON;
Keywords:
a-Si : H; light induced degradation; Staebler-Wronski effect; annealing activation energy; photoconductivity;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Eray, A Hacettepe Univ, Dept Engn Phys, TR-06532 Ankara, Turkey Hacettepe Univ Ankara Turkey TR-06532 s, TR-06532 Ankara, Turkey
Citazione:
A.O. Kodolbas et al., "Effect of light-induced metastable defects on photocarrier lifetime", SOL EN MAT, 69(4), 2001, pp. 325-337

Abstract

Creation and annealing of light-induced defects and their effect on photocarrier lifetime have been studied at 120 and 300 K using constant photocurrent method (CPM) and steady-state photoconductivity measurements. A hysteresis-like relation is observed between photoconductivity and light-induced defect density. This relation depends on both degradation temperature and light intensity used for the degradation. A broad, resembling a two-componentdistribution of defect annealing activation energies together with distribution of recombination coefficients account for the observed changes at 120K, On the other hand, these distributions are narrower and sharply peaked at about 1 eV for the 300 K measurements. Results indicate that defects which are created at the earlier stages of the illumination have smaller annealing activation energies and higher recombination coefficient (capture cross-section) and these are better recombination centers than the defects withhigher annealing activation energies. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 01/12/20 alle ore 21:47:16