Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Electron correlation effects at variable-range hopping in doped GaAs, CdTe, Ge and Si
Autore:
Rentzsch, R; Ionov, AN;
Indirizzi:
Free Univ Berlin, FB Phys, WE I, D-14195 Berlin, Germany Free Univ BerlinBerlin Germany D-14195 s, WE I, D-14195 Berlin, Germany Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia Russian Acad Sci St Petersburg Russia 196140 t Petersburg 196140, Russia
Titolo Testata:
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
fascicolo: 9, volume: 81, anno: 2001,
pagine: 1065 - 1081
SICI:
1364-2812(200109)81:9<1065:ECEAVH>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
METAL-INSULATOR-TRANSITION; LOW-TEMPERATURE CONDUCTIVITY; CRITICAL-BEHAVIOR; COULOMB GAP; IMPURITY CONCENTRATION; MAGNETIC-FIELDS; TRANSMUTATION; SEMICONDUCTORS; GERMANIUM; LOCALIZATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
53
Recensione:
Indirizzi per estratti:
Indirizzo: Rentzsch, R Free Univ Berlin, FB Phys, WE I, Arnimallee 14, D-14195 Berlin, Germany Free Univ Berlin Arnimallee 14 Berlin Germany D-14195 Germany
Citazione:
R. Rentzsch e A.N. Ionov, "Electron correlation effects at variable-range hopping in doped GaAs, CdTe, Ge and Si", PHIL MAG B, 81(9), 2001, pp. 1065-1081

Abstract

We report low-temperature electrical resistivity and magnetoresistivity measurements of doped semiconductors below the critical concentration of the metal-insulator transition. The series of samples were chemically doped (CdTe and Si) or were obtained by the neutron transmutation doping technique (GaAs and Ge). The resistivity was measured in the temperature range T = 0.03-42 K. All samples show, at the lowest temperatures. variable-range hopping resistivity rho (T) = rho (0) exp [(T-0/T)(s)] with s = 1/2. Comparison of the experimentally determined To with the theoretical single-electron value of Efros and Shklovskii. T-0 T-ES0 = 2.8e(2)/k(B)a(B)K(0), shows that multiple-electron transitions are dominant at all compensations except K greater than or equal to 0.7. where a large scale potential relief exists. In this case the single-electron approach seems to be a good approximation.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/09/20 alle ore 06:08:13