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Titolo:
Growth at GaN/AlN hetero structures: a local view
Autore:
Boscherini, F; Lantier, R; Rizzi, A; DAcapito, F; Mobilio, S;
Indirizzi:
Univ Bologna, Dipartimento Fis, INFM, I-40127 Bologna, Italy Univ BolognaBologna Italy I-40127 nto Fis, INFM, I-40127 Bologna, Italy ISI, Forschungszentrum, Julich, Germany ISI Julich GermanyISI, Forschungszentrum, Julich, Germany Univ Modena, Dipartimento Fis, INFM, I-41100 Modena, Italy Univ Modena Modena Italy I-41100 imento Fis, INFM, I-41100 Modena, Italy GILDA, OGG, INFM, F-38043 Grenoble, France GILDA Grenoble France F-38043GILDA, OGG, INFM, F-38043 Grenoble, France Univ Roma Tre, Dipartimento Fis, Rome, Italy Univ Roma Tre Rome ItalyUniv Roma Tre, Dipartimento Fis, Rome, Italy Nazl Frascati Lab, Ist Nazl Fis Nucl, Rome, Italy Nazl Frascati Lab RomeItaly ascati Lab, Ist Nazl Fis Nucl, Rome, Italy
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
fascicolo: 3, volume: 86, anno: 2001,
pagine: 225 - 227
SICI:
0921-5107(20011003)86:3<225:GAGHSA>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
GALLIUM NITRIDE; ELASTIC PROPERTIES; GAN; CONSTANTS;
Keywords:
nitrides; heterostructures; strain; X-ray absorption spectroscopy; synchrotron radiation;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Boscherini, F Univ Bologna, Dipartimento Fis, INFM, Viale C Berti Pichat 6-2, I-40127 Bologna, Italy Univ Bologna Viale C Berti Pichat 6-2 Bologna Italy I-40127
Citazione:
F. Boscherini et al., "Growth at GaN/AlN hetero structures: a local view", MAT SCI E B, 86(3), 2001, pp. 225-227

Abstract

The local structure at GaN on AlN(0001) heterostructures is studied using polarization dependent X-ray absorption spectroscopy with synchrotron radiation; the Ga K edge has been used and the analysis has been extended up to the third coordination shell. Samples have been deposited using molecular beam epitaxy with deposition temperatures in the range 620-790 degreesC and are approximately 6 mn. thick. We find that the GaN/AlN interface is abrupt(no interdiffusion) and that a partially pseudomorphically strained growthoccurs, the in-plane strain increasing as the deposition temperature decreases. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/09/20 alle ore 21:12:29