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Titolo:
Gallium nitride based transistors
Autore:
Xing, H; Keller, S; Wu, YF; McCarthy, L; Smorchkova, IP; Buttari, D; Coffie, R; Green, DS; Parish, G; Heikman, S; Shen, L; Zhang, N; Xu, JJ; Keller, BP; DenBaars, SP; Mishra, UK;
Indirizzi:
Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara Santa Barbara CA USA 93106 Barbara, CA 93106 USA CREE Lighting Co, Goleta, CA 93117 USA CREE Lighting Co Goleta CA USA 93117 EE Lighting Co, Goleta, CA 93117 USA Gtran, Newbury Pk, CA 91320 USA Gtran Newbury Pk CA USA 91320Gtran, Newbury Pk, CA 91320 USA
Titolo Testata:
JOURNAL OF PHYSICS-CONDENSED MATTER
fascicolo: 32, volume: 13, anno: 2001,
pagine: 7139 - 7157
SICI:
0953-8984(20010813)13:32<7139:GNBT>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
MG-DOPED GAN; HETEROJUNCTION BIPOLAR-TRANSISTORS; FIELD-EFFECT TRANSISTOR; MOLECULAR-BEAM EPITAXY; ALGAN/GAN HETEROSTRUCTURES; ELECTRON-TRANSPORT; PERFORMANCE; MOBILITY; LEAKAGE; VOLTAGE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
74
Recensione:
Indirizzi per estratti:
Indirizzo: Xing, H Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara Santa Barbara CA USA 93106 CA 93106 USA
Citazione:
H. Xing et al., "Gallium nitride based transistors", J PHYS-COND, 13(32), 2001, pp. 7139-7157

Abstract

An overview is presented of progress in GaN electronic devices along with recent results from work at UCSB. From 1995 to 2001, the power performance of AlGaN/GaN high electron mobility transistors (HEMT) improved from 1.1 to11 W mm(-1), respectively. The disadvantage of the low thermal conductivity of the sapphire substrate was mitigated by flip-chip bonding onto AIN substrates, yielding large periphery devices with an output power of 7.6 W. A variety of HEMT amplifier circuits have been demonstrated. The first AlGaN/GaN heterojunction bipolar transistor (HBT) was demonstrated in 1998, with a current gain of about 3. By developing the technique of emitter regrowth,a current gain of 10 was achieved in both GaN BJTs and AlGaN/GaN HBTs. A common emitter current gain cutoff frequency of 2 GHz was measured. Criticalissues involved in the growth of high quality AlGaN/(AlN)/GaN heterostructures and GaN:Mg by metal-organic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE) and the device fabrication are discussed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 21/09/20 alle ore 16:06:23