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Titolo:
Nitride light-emitting diodes
Autore:
Mukai, T; Nagahama, S; Iwasa, N; Senoh, M; Yamada, T;
Indirizzi:
Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan Nichia Corp Tokushima Japan 7748601 nd Res Lab, Tokushima 7748601, Japan Nichia Corp, Dept Res & Dev, Tokushima 7748601, Japan Nichia Corp Tokushima Japan 7748601 Res & Dev, Tokushima 7748601, Japan
Titolo Testata:
JOURNAL OF PHYSICS-CONDENSED MATTER
fascicolo: 32, volume: 13, anno: 2001,
pagine: 7089 - 7098
SICI:
0953-8984(20010813)13:32<7089:NLD>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAN GROWTH; LAYERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Mukai, T Nichia Corp, Nitride Semicond Res Lab, 491 Oka, Tokushima 7748601, Japan Nichia Corp 491 Oka Tokushima Japan 7748601 shima 7748601, Japan
Citazione:
T. Mukai et al., "Nitride light-emitting diodes", J PHYS-COND, 13(32), 2001, pp. 7089-7098

Abstract

We review the progress in the field of InGaN-based light-emitting diodes (LEDs) and discuss the issue of threading dislocations and the luminous efficiency. The first candela-class blue LEDs have been developed. An InGaN layer was used to produce these LEDs instead of a GaN active layer. The quantum-well structure InGaN active layer dramatically improved the external quantum efficiency. There are a number of threading dislocations in nitride-based LEDs. InGaN LEDs, however, have quite high external quantum efficiency. With regard to this, it is thought that the fluctuation of the indium mole fraction is strongly related to the high external quantum efficiency. Considering the density of threading dislocations in the nitride-based LEDs, we discuss what can improve the external quantum efficiency of nitride-based LEDs.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 13:37:42