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Titolo:
Improvement of the transfer coefficient of GaAs/Si spin-valve transistors
Autore:
Dessein, K; Kumar, PSA; Lagae, L; De Boeck, J; Delaey, L; Borghs, G;
Indirizzi:
IMEC, B-3001 Louvain, Belgium IMEC Louvain Belgium B-3001IMEC, B-3001 Louvain, Belgium Katholieke Univ Leuven, Dept MTM, B-3001 Heverlee, Belgium Katholieke UnivLeuven Heverlee Belgium B-3001 B-3001 Heverlee, Belgium ISTG, Mesa Res Inst, NL-7500 AE Enschede, Netherlands ISTG Enschede Netherlands NL-7500 AE t, NL-7500 AE Enschede, Netherlands
Titolo Testata:
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
, volume: 226, anno: 2001,
parte:, 2
pagine: 2081 - 2083
SICI:
0304-8853(200105)226:<2081:IOTTCO>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Keywords:
spin-valve transistor; amorphization; metal-semiconductor interfaces; wafer bonding;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Dessein, K IMEC, Kapeldreef 75, B-3001 Louvain, Belgium IMEC Kapeldreef 75Louvain Belgium B-3001 001 Louvain, Belgium
Citazione:
K. Dessein et al., "Improvement of the transfer coefficient of GaAs/Si spin-valve transistors", J MAGN MAGN, 226, 2001, pp. 2081-2083

Abstract

Nowadays GaAs/Si hot electron spin-valve transistors can be readily made using the vacuum bonding technique. They show sharp variations in collector current in small magnetic fields, good for sensor applications. However, the transfer coefficient of the device, defined as collected current over injected current, is only around 10(-4)%. We address the structural propertiesof GaAs/Si spin-valve transistors that influence the transfer coefficient. An improvement of the transfer coefficient of more than one order of magnitude is obtained by implementing a GaAs/AlAs emitter launcher maintaining 93% of relative collector current change. (C) 2001 Elsevier Science B.V. Allrights reserved.

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Documento generato il 20/09/20 alle ore 01:02:28