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Titolo:
Electronic structure and magnetism of diluted magnetic semiconductor (Zn, Cr)Te
Autore:
Shoren, H; Tanaka, N; Motizuki, K;
Indirizzi:
Okayama Univ Sci, Dept Appl Phys, Okayama 7000005, Japan Okayama Univ SciOkayama Japan 7000005 Appl Phys, Okayama 7000005, Japan
Titolo Testata:
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
, volume: 226, anno: 2001,
parte:, 2
pagine: 2033 - 2035
SICI:
0304-8853(200105)226:<2033:ESAMOD>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Keywords:
electronic structure; diluted magnetic semiconductors; superlattices-artificial;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Motizuki, K Okayama Univ Sci, Dept Appl Phys, 1-1 Ridai Cho, Okayama 7000005, Japan Okayama Univ Sci 1-1 Ridai Cho Okayama Japan 7000005 5, Japan
Citazione:
H. Shoren et al., "Electronic structure and magnetism of diluted magnetic semiconductor (Zn, Cr)Te", J MAGN MAGN, 226, 2001, pp. 2033-2035

Abstract

Electronic band structures of magnetic semiconductors based on zinc-blendetype II-VI compounds such as Zn1-xCrxTe (x = 1, 0.5 and 0.25) are calculated for non-magnetic (NM), ferromagnetic (F) and antiferromagnetic (AF) states, by using the full-potential linearized augmented-plane-wave (FLAPW) method. In the F state, the half-metallic behavior is found and the magnetic polarization antiparallel to the Cr moment is induced at the neighboring Te-site. By calculating the total energy of each state, we have found that theF state is always stable compared with the NM state. In the case of the hypothetical zinc-blende type CrTe, the F state has been found to be stable compared with the AF state described by Q = (0, 0, 2 pi /a). (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/12/20 alle ore 01:13:35