Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Formation of selective epitaxially grown silicon with a flat edge by ultra-high vacuum chemical vapor deposition
Autore:
Nakahata, T; Yamamoto, K; Maruno, S; Inagaki, T; Sugihara, K; Abe, Y; Miyamoto, A; Ozeki, T;
Indirizzi:
Mitsubishi Elect Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan Mitsubishi Elect Corp Amagasaki Hyogo Japan 6618661 Hyogo 6618661, Japan Air Water Inc, Sakai Res Ctr, Sakai, Osaka 5928331, Japan Air Water Inc Sakai Osaka Japan 5928331 Ctr, Sakai, Osaka 5928331, Japan
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1-2, volume: 233, anno: 2001,
pagine: 82 - 87
SICI:
0022-0248(200111)233:1-2<82:FOSEGS>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
REGIONS;
Keywords:
crystal morphology; surface processes; chemical vapor deposition processes; selective epitaxy; semiconducting silicon; field effect transistors;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Nakahata, T Mitsubishi Elect Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan Mitsubishi Elect Corp 8-1-1 Tsukaguchi Honmachi Amagasaki Hyogo Japan 6618661
Citazione:
T. Nakahata et al., "Formation of selective epitaxially grown silicon with a flat edge by ultra-high vacuum chemical vapor deposition", J CRYST GR, 233(1-2), 2001, pp. 82-87

Abstract

We studied the dependence of selective epitaxially grown silicon (SEG-Si) shape on the conditions of ultra-high vacuum chemical vapor deposition using disilane (Si2H6) gas, which grew on Si (100) substrates patterned with SiO2 stripes. SEG-Si edges typically formed two types of configurations: facets and bumps. It was confirmed that the shape of SEG-Si edge is strongly dependent on the growth mode of the (100) plane: facet configurations are formed in the mass transfer limited region, and bump configurations are formedin the kinetically limited region. Therefore, it was concluded that the surface migration length of adatoms resulting from the decomposition of Si2H6molecules is related to the formation of the shape of the SEG-Si. Moreover, it was confirmed that the flat shape of the SEG-Si is obtained by adjusting both the Si2H6 flow rates and the growth temperature. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/04/20 alle ore 14:53:48