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Titolo:
Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates
Autore:
Zheng, XH; Qu, B; Wang, YT; Dai, ZZ; Han, JY; Yang, H; Liang, JW;
Indirizzi:
Chinese Acad Sci, Inst Semicond, R&D Ctr Optoelec Technol, Beijing 100093,Peoples R China Chinese Acad Sci Beijing Peoples R China 100093 g 100093,Peoples R China Chinese Acad Geol Sci, Inst Mineral Deposits, Beijing 100037, Peoples R China Chinese Acad Geol Sci Beijing Peoples R China 100037 37, Peoples R China
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1-2, volume: 233, anno: 2001,
pagine: 40 - 44
SICI:
0022-0248(200111)233:1-2<40:CAOMIT>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; GROWTH; GAN; SI; DEFECTS; EPITAXY; LAYERS; MBE;
Keywords:
X-ray diffraction; chemical vapor deposition processes; silicon carbide;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Zheng, XH Chinese Acad Sci, Inst Semicond, R&D Ctr Optoelec Technol, POB 912, Beijing 100093, Peoples R China Chinese Acad Sci POB 912 Beijing Peoples R China 100093 R China
Citazione:
X.H. Zheng et al., "Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates", J CRYST GR, 233(1-2), 2001, pp. 40-44

Abstract

Microtwins in the 3C-SiC films grown on Si(0 0 1) by atmosphere pressure chemical vapor deposition (APCVD) were investigated in detail using X-ray four-circle diffractometry. The Phi scan shows that 3C-SiC films can grow on Si substrates epitaxially and epitaxial relationship is revealed as (0 0 1)(3C) (SiC)parallel to (0 0 1)(Si),[1 1 1](3C-SiC)parallel to [1 1 1](Si). Other diffraction peaks at about 15.8 degrees in x emerged in the pole figures of the (I 1 1) 3C-SiC. We performed the pole figure of (1 0 (1) over bar0)h-SiC and the reciprocal space mapping from the (1 1 1) reciprocal lattice point of base SiC to the (0 0 2) point of microtwin for the first time, indicating that the diffraction peaks at 15.8 degrees in x result from not hexagonal SiC but microtwins of 3C-SiC, and twin inclusions are estimated to be around 1%. (C) 2001 Published by Elsevier Science B.V.

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Documento generato il 09/04/20 alle ore 00:29:40