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Titolo:
Improvement of detection limit for secondary-ion mass spectrometry depth profiling of argon in silicon by energy filtering
Autore:
Yamazaki, H;
Indirizzi:
Toshiba Co Ltd, Ctr Res & Dev, Isogo Ku, Yokohama, Kanagawa 2358522, JapanToshiba Co Ltd Yokohama Kanagawa Japan 2358522 a, Kanagawa 2358522, Japan
Titolo Testata:
INTERNATIONAL JOURNAL OF MASS SPECTROMETRY
fascicolo: 1, volume: 209, anno: 2001,
pagine: 31 - 38
SICI:
1387-3806(20010824)209:1<31:IODLFS>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
IONIZATION PROBABILITY; SPUTTERED ATOMS; EMISSION; SIMS;
Keywords:
secondary-ion mass spectrometry; depth profiling analysis; rare gases; energy-filtering technique; implantation;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Yamazaki, H Toshiba Co Ltd, Ctr Res & Dev, Isogo Ku, 8 Shinsugita Cho, Yokohama, Kanagawa 2358522, Japan Toshiba Co Ltd 8 Shinsugita Cho Yokohama Kanagawa Japan 2358522
Citazione:
H. Yamazaki, "Improvement of detection limit for secondary-ion mass spectrometry depth profiling of argon in silicon by energy filtering", INT J MASS, 209(1), 2001, pp. 31-38

Abstract

Secondary-ion mass spectrometry depth profiling of argon in Si has been investigated to achieve a lower detection limit. Depth profiling was performed by monitoring M+ or MCs+ secondary ions (M is the element to be analyzed), which were obtained with O-2(+) or Cs+ primary ions, respectively. The influence of carbonaceous mass interference ions on the detection of argon was clarified and described. It was confirmed that almost all Ar+ ions are formed in the vacuum within a distance of 100 mum from the sample surface, whereas the carbonaceous ions are formed at the surface. Using the energy-filtering (the sample voltage offsetting) technique, the detection of Ar+ ionsformed above the surface and of those formed at the surface leads to increasing detecting sensitivity. The energy-filtering technique can also eliminate the influence of carbonaceous mass interference ions during analysis ofAr+. The secondary-ion mass spectrometry technique using O-2(+) primary ions combined with the energy filtering provides a better detection limit fordepth profiling of argon in Si than does Cs+ primary-ion bombardment measurement. (C) 2001 Elsevier Science B.V.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/03/20 alle ore 13:08:29