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Titolo:
Ultrahigh frequency DC-to-DC converters using GaAs power switches
Autore:
Ajram, S; Salmer, G;
Indirizzi:
ATMEL Rousset, Dept Lib & Design Tools, F-13106 Rousset, France ATMEL Rousset Rousset France F-13106 sign Tools, F-13106 Rousset, France Univ Sci & Tech Lille Flandres Artois, Inst Elect & Microelect Nord, F-59652 Villeneuve Dascq, France Univ Sci & Tech Lille Flandres Artois Villeneuve Dascq France F-59652 ce
Titolo Testata:
IEEE TRANSACTIONS ON POWER ELECTRONICS
fascicolo: 5, volume: 16, anno: 2001,
pagine: 594 - 602
SICI:
0885-8993(200109)16:5<594:UFDCUG>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Keywords:
GaAs MESFET; GaAs power switches; GaAs Schottky rectifiers; HF dc-to-dc converter; HF ferrites; MHz converter;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Ajram, S ATMEL Rousset, Dept Lib & Design Tools, F-13106 Rousset, France ATMEL Rousset Rousset France F-13106 s, F-13106 Rousset, France
Citazione:
S. Ajram e G. Salmer, "Ultrahigh frequency DC-to-DC converters using GaAs power switches", IEEE POW E, 16(5), 2001, pp. 594-602

Abstract

A detailed investigation of the switching characteristics for High Frequency power devices based on different technologies has been provided: BJT, MOSFET, and MESFET/HEMT structures are considered. Advantages of GaAs power switches over Silicon ones have been established and illustrated. Hybrid technology prototypes of dc-to-dc power converters operating above 10 MHz and exclusively using GaAs components have been realized: For a non optimized boost converter operating at 100 MHz, a power efficiency of 54% has been achieved with a 6 V/12 V conversion ratio and an output power of 1.5 W. For optimized prototypes, using high frequency assembly techniques, an efficiencyof 80 % at 50 MHz, 74 % at 100 MHz and 60 % at 250 MHz have been obtained with 6 V/12 V and 3 W.

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Documento generato il 29/09/20 alle ore 10:07:35