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Titolo:
Device structures based on resonant tunneling diodes: A theoretical consideration
Autore:
Abramov, II; Korolev, AV;
Indirizzi:
Belarussian State Univ Informat & Radioelect, Minsk 220027, Byelarus Belarussian State Univ Informat & Radioelect Minsk Byelarus 220027 larus
Titolo Testata:
TECHNICAL PHYSICS
fascicolo: 9, volume: 46, anno: 2001,
pagine: 1190 - 1195
SICI:
1063-7842(2001)46:9<1190:DSBORT>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
INSULATOR-SEMICONDUCTOR STRUCTURE; CURRENT-VOLTAGE CHARACTERISTICS; FREQUENCY-DIVIDER; CIRCUIT; MODEL; POWER; HETEROSTRUCTURES; SIMULATION; COMPLEXITY; TRANSISTOR;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
40
Recensione:
Indirizzi per estratti:
Indirizzo: Abramov, II Belarussian State Univ Informat & Radioelect, Ul Brovki 6, Minsk 220027, Byelarus Belarussian State Univ Informat & Radioelect Ul Brovki 6 Minsk Byelarus 220027
Citazione:
I.I. Abramov e A.V. Korolev, "Device structures based on resonant tunneling diodes: A theoretical consideration", TECH PHYS, 46(9), 2001, pp. 1190-1195

Abstract

Simple device structures incorporating resonant tunneling diodes (RTDs) are considered in terms of electrical models and the EC-RTS-NANODEV software suite. It is shown that the structures can be used in multilevel logic, frequency converters, and generators of harmonic, relaxation, and chaotic signals. (C) 2001 MAIK "Nauka/Interperiodica".

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/01/20 alle ore 07:32:30