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Titolo:
Investigation of Ge film growth on the Si(100) surface by recording diffractometry
Autore:
Nikiforov, AI; Cherepanov, VA; Pchelyakov, OP;
Indirizzi:
Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia Russian Acad Sci Novosibirsk Russia 630090 v, Novosibirsk 630090, Russia
Titolo Testata:
SEMICONDUCTORS
fascicolo: 9, volume: 35, anno: 2001,
pagine: 988 - 991
SICI:
1063-7826(2001)35:9<988:IOGFGO>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
MBE GROWTH; HETEROEPITAXY; ISLANDS; SI(001);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Nikiforov, AI Russian Acad Sci, Inst Semicond Phys, Siberian Div, Pr Akad Lavrenteva 13,Novosibirsk 630090, Russia Russian Acad Sci Pr Akad Lavrenteva 13 Novosibirsk Russia 630090
Citazione:
A.I. Nikiforov et al., "Investigation of Ge film growth on the Si(100) surface by recording diffractometry", SEMICONDUCT, 35(9), 2001, pp. 988-991

Abstract

A diagram of the structural and morphological state of a Ge film on a Si(100) surface is constructed using in situ recording of the reflection high-energy electron diffraction patterns. The diagram involves the following regions: the continuous film, hut- and dome-shaped clusters, and dome-shaped clusters with misfit dislocations at the interface. The variation in the lattice parameters of the Ge film during MBE growth on the Si(100) surface is measured for the first time, and the oscillations of the variation in the lattice parameter for the (100) plane during two-dimensional layer-by-layer growth are found. (C) 2001 MAIK "Nauka/ Interperiodica".

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/04/20 alle ore 06:23:49