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Titolo:
Study of strain and composition of the self-organized GE dots by grazing incident X-ray diffraction
Autore:
Jiang, XX; Jiang, Z; Jiang, W; Jia, Q; Zheng, W; Xian, D; Wang, X;
Indirizzi:
Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil,Beijing 100039, Peoples R China Chinese Acad Sci Beijing Peoples R China 100039 100039, Peoples R China Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China Fudan UnivShanghai Peoples R China 200433 nghai 200433, Peoples R China
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
, volume: 467, anno: 2001,
parte:, 1
pagine: 362 - 365
SICI:
0168-9002(20010721)467:<362:SOSACO>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; INITIAL-STAGES; QUANTUM DOTS; GROWTH; RELAXATION; SI(100); SI(001); SCATTERING; ISLANDS;
Keywords:
Ge dots; strain and composition; grazing incident X-ray diffraction;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Jiang, XX Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil,POB 918,Yaqaun Rd, Beijing 100039, Peoples R China Chinese Acad Sci POB 918,Yaqaun Rd Beijing Peoples R China 100039
Citazione:
X.X. Jiang et al., "Study of strain and composition of the self-organized GE dots by grazing incident X-ray diffraction", NUCL INST A, 467, 2001, pp. 362-365

Abstract

Grazing incident X-ray diffraction at different grazing angles for self-organized Ge dots grown on Si(0 0 1) are carried out and lattice constant expansions of 1.2% parallel to the surface as compared with the Si lattice arefound within the Ge dots. A 3.1% lattice expansion of the Ge dots along the growth direction is also found by ordinary X-ray (0 0 4) diffraction. According to the Poisson equation and the Vegard law, our results infer that the Ge dot should be a partially strain relaxed SiGe alloy with Ge content of about 55%. (C) 2001 Elsevier Science B.V, All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 19/01/20 alle ore 09:03:23