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Titolo:
SPUTTERING BEHAVIOR OF BORON USING ELECTRON-CYCLOTRON-RESONANCE PLASMA
Autore:
ITO Y; KURIKI S; SAIDOH M; NISHIKAWA M;
Indirizzi:
OSAKA UNIV,FAC ENGN,DEPT ELECTROMAGNET ENERGY ENGN,2-1 YAMADAOKA SUITA OSAKA 565 JAPAN JAPAN ATOM ENERGY RES INST,NAKA FUS RES ESTAB NAKA IBARAKI 31101 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 10, volume: 33, anno: 1994,
pagine: 5959 - 5966
SICI:
0021-4922(1994)33:10<5959:SBOBUE>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
BORONIZATION; DECABORANE; TOKAMAK;
Keywords:
ECR PLASMA; BORON SPUTTERING; BORON TEMPERATURE; BORON THIN FILM;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
14
Recensione:
Indirizzi per estratti:
Citazione:
Y. Ito et al., "SPUTTERING BEHAVIOR OF BORON USING ELECTRON-CYCLOTRON-RESONANCE PLASMA", JPN J A P 1, 33(10), 1994, pp. 5959-5966

Abstract

Boron sputtering by plasma ions is investigated using electron cyclotron resonance (ECR) discharge of neon gas. The temperature of boron onan electrode during the discharge becomes high enough that the resistance of boron is sufficiently small in comparison with that of the plasma sheath in the application of negative voltage V. Ion current flowing from the plasma and the line emission from the sputtered boron are measured as a function of V under conditions of microwave input power 200-500 W and the neon gas pressure 1-10 mTorr. The sputtering yield at ion energy E=3 keV is about one order of magnitude larger than that at E=0.5 keV. Boron thin films are prepared by the sputtering method in the case of V=-2 kV. The deposition rate normalized by the ion current is about 100 Angstrom/s/A measured at a distance of about 2 cm fromthe boron surface.

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Documento generato il 29/03/20 alle ore 23:44:12