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Titolo:
Gradation stitching exposure performance in the improvement of dose uniformity and continuity at the field stitching boundaries
Autore:
Horiuchi, T; Mochida, H;
Indirizzi:
Tokyo Denki Univ, Chiyoda Ku, Tokyo 1018457, Japan Tokyo Denki Univ Tokyo Japan 1018457 v, Chiyoda Ku, Tokyo 1018457, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 3A, volume: 40, anno: 2001,
pagine: 1511 - 1516
SICI:
0021-4922(200103)40:3A<1511:GSEPIT>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
EXCIMER-LASER LITHOGRAPHY; RESOLUTION ENHANCEMENT TECHNIQUES; DEEP-ULTRAVIOLET; 157 NM; FABRICATION; PATTERNS; SYSTEM;
Keywords:
optical lithography; scan exposure; gradation stitching; trapezoidal slit; gradation stitching exposure; dose continuity; dose uniformity;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Horiuchi, T Tokyo Denki Univ, Chiyoda Ku, 2-2 Kanda Nishiki Cho, Tokyo 1018457, Japan Tokyo Denki Univ 2-2 Kanda Nishiki Cho Tokyo Japan 1018457 an
Citazione:
T. Horiuchi e H. Mochida, "Gradation stitching exposure performance in the improvement of dose uniformity and continuity at the field stitching boundaries", JPN J A P 1, 40(3A), 2001, pp. 1511-1516

Abstract

The effectiveness of gradation stitching exposure is demonstrated using a laboratory-built exposure system. After investigating convenient slit shapes, trapezoidal slits with an apex angle of 80 degrees were adopted. From the viewpoints of case of preventing corner rounding of exposure light flux and slit fabrication, trapezoidal slits were determined to be better than pentagonal slits. As the first experimental stage, exposure dose uniformity and continuity of the stitched parts are evaluated at the reticle plane in order to eliminate the complicated influence of the projection optics on patterns printed on wafers. Exposure and development of a special resist the dissolved depth of which after development changes almost linearly with the exposure dose is utilized for detecting partial irregular dose distributionin the narrow stitched parts. It is clarified that the dose inequality in the stitched parts is improved by adopting the gradation stitching exposuremethod. Moreover, by observing the line-and-space test pattern profiles and measuring the line pattern widths in the stitched parts, it is proved that the changes of top-view profiles and line widths are also very small and negligible. It will become difficult to develop a high-resolution projection optics with a large field for shorter wavelengths hereafter. Applying thegradation stitching exposure, large LSI chips will be replicated favorablyby stitching two small scan fields. If a small field size is admissible, resolution and/or depth of focus will also be considerably improved.

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Documento generato il 06/04/20 alle ore 21:43:13