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Titolo:
Lateral solid phase recrystallization from the crystal seed in Ge-ion-implanted amorphous silicon films by repetition rapid thermal annealing
Autore:
Seo, JW; Kokubo, Y; Aya, Y; Nohda, T; Hamada, H; Kuwano, H;
Indirizzi:
Keio Univ, Fac Sci & Technol, Dept Elect Engn, Yokohama, Kanagawa 2238522,Japan Keio Univ Yokohama Kanagawa Japan 2238522 okohama, Kanagawa 2238522,Japan SANYO Elect Co Ltd, Ctr Microelect Res, Gifu 5030195, Japan SANYO Elect CoLtd Gifu Japan 5030195 icroelect Res, Gifu 5030195, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 4A, volume: 40, anno: 2001,
pagine: 2150 - 2154
SICI:
0021-4922(200104)40:4A<2150:LSPRFT>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Keywords:
excimer laser annealing; lateral solid-phase recrystallization; crystal seed; single rapid thermal annealing; repetition rapid thermal annealing;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
9
Recensione:
Indirizzi per estratti:
Indirizzo: Seo, JW Keio Univ, Fac Sci & Technol, Dept Elect Engn, 3-14-1 Hiyoshi, Yokohama, Kanagawa 2238522, Japan Keio Univ 3-14-1 Hiyoshi Yokohama Kanagawa Japan 2238522 22, Japan
Citazione:
J.W. Seo et al., "Lateral solid phase recrystallization from the crystal seed in Ge-ion-implanted amorphous silicon films by repetition rapid thermal annealing", JPN J A P 1, 40(4A), 2001, pp. 2150-2154

Abstract

Lateral solid-phase recrystallization (LSPR) from the crystal seed selectively formed by excimer laser annealing in Ge-ion-implanted amorphous silicon (a-Si) is performed by rapid thermal annealing (RTA). The process is carried out as a basic research study to grow grains in the current direction along the channel from the drain to the source in poly-Si thin film transistors. In this letter,:it is shown that repetition RTA, in which on/off of the setting temperature is periodically repeated with a certain heat pulse width, suppresses the random nucleation in a-Si films and enlarges LSPR grains compared with single RTA, when the heat pulse width is sufficiently shorter than the incubation time which is the time before the onset of nucleation.

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Documento generato il 25/11/20 alle ore 14:04:26