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Titolo:
Integration of terraced laser diode and garnet crystals by wafer direct bonding
Autore:
Yokoi, H; Waniishi, T; Mizumoto, T; Shimizu, M; Sakurai, K; Futakuchi, N; Nakano, Y;
Indirizzi:
Tokyo Inst Technol, Grad Sch Sci & Technol, Dept Elect & Elect Engn, Meguro Ku, Toyota 1528552, Japan Tokyo Inst Technol Toyota Japan 1528552 Meguro Ku, Toyota 1528552, Japan Univ Tokyo, Sch Engn, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan Univ Tokyo Tokyo Japan 1138656 ect Engn, Bunkyo Ku, Tokyo 1138656, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 5A, volume: 40, anno: 2001,
pagine: 3463 - 3467
SICI:
0021-4922(200105)40:5A<3463:IOTLDA>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
SEMICONDUCTOR-LASERS; INP; DEVICES; GD3GA5O12; MIRRORS; GAAS;
Keywords:
reactive ion etching; wafer direct bonding; InP; garnet crystals; laser diode; optical isolator;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Yokoi, H Tokyo Inst Technol, Grad Sch Sci & Technol, Dept Elect & Elect Engn, Meguro Ku, 2-12-1 Ookayama, Toyota 1528552, Japan Tokyo Inst Technol 2-12-1 Ookayama Toyota Japan 1528552 2, Japan
Citazione:
H. Yokoi et al., "Integration of terraced laser diode and garnet crystals by wafer direct bonding", JPN J A P 1, 40(5A), 2001, pp. 3463-3467

Abstract

Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H-2/O-2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.

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Documento generato il 19/09/20 alle ore 21:58:15