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Titolo:
A new nucleation-site-control excimer-laser-crystallization method
Autore:
Nakata, M; Inoue, K; Matsumura, M;
Indirizzi:
Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan TokyoInst Technol Tokyo Japan 1528550 , Meguro Ku, Tokyo 1528550, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 5A, volume: 40, anno: 2001,
pagine: 3049 - 3054
SICI:
0021-4922(200105)40:5A<3049:ANNEM>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON THIN-FILMS; GROWTH;
Keywords:
thin-film transistor; excimer-laser annealing; lateral grain growth; poly-Si; phase shift mask;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Nakata, M Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 O Okayama, Tokyo 1528550, Japan Tokyo Inst Technol 2-12-1 O Okayama Tokyo Japan 1528550 , Japan
Citazione:
M. Nakata et al., "A new nucleation-site-control excimer-laser-crystallization method", JPN J A P 1, 40(5A), 2001, pp. 3049-3054

Abstract

A new nucleation-site-control method has been proposed for excimer-laser crystallization, where a cross-coupled phase shifter is placed on the samplesurface. High thermal conductivity of molten Si flattens its temperature distribution shortly after laserlight irradiation, and, in turn, confines a low-temperature Si region to a very narrow area. Since nucleation can take place only in this narrow area of unmolten Si, not only is the number of nuclei limited to unity, but also the position of a nucleus can be determined. The usefulness of the proposed method is investigated theoretically and experimentally. A single grain as long as 5 mum in diameter was formed at the desired position.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 02:27:03