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Titolo:
High frequency response of amorphous tantalum oxide thin films
Autore:
Kim, JY; Garg, A; Rymaszewski, EJ; Lu, TM;
Indirizzi:
Rensselaer Polytech Inst, Ctr Integrated Elect Elect Mfg & Elect Media, Troy, NY 12180 USA Rensselaer Polytech Inst Troy NY USA 12180 lect Media, Troy, NY 12180 USA Adv Micro Devices Inc, Sunnyvale, CA 94088 USA Adv Micro Devices Inc Sunnyvale CA USA 94088 Inc, Sunnyvale, CA 94088 USA
Titolo Testata:
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES
fascicolo: 3, volume: 24, anno: 2001,
pagine: 526 - 533
SICI:
1521-3331(200109)24:3<526:HFROAT>2.0.ZU;2-Z
Fonte:
ISI
Lingua:
ENG
Soggetto:
DECOUPLING CAPACITORS;
Keywords:
dielectric constant; dielectric thin film; frequency domain; MIM capacitors; network analyzer; parasitic components; scattering parameters; tantalum oxide films; TDR; time domain;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, JY Rensselaer Polytech Inst, Ctr Integrated Elect Elect Mfg & Elect Media, Troy, NY 12180 USA Rensselaer Polytech Inst Troy NY USA 12180 ia, Troy, NY 12180 USA
Citazione:
J.Y. Kim et al., "High frequency response of amorphous tantalum oxide thin films", IEEE T COMP, 24(3), 2001, pp. 526-533

Abstract

Amorphous tantalum oxide films were deposited using a pulsed de reactive magnetron sputtering technique at low temperature (less than or equal to 200degreesC). A test vehicle (metal- insulator-metal structure) was designed and fabricated for the high frequency characterization of the dielectric thin film. The dielectric constant and loss tangent of the amorphous tantalumoxide thin film were measured using dc, time domain reflectometry (TDR), and network analyzer up to 10 GHz. The measured dielectric constant and losstangent was 22 and 0.007, respectively from 1 KHz to 10 GHz. The high frequency properties of the amorphous tantalum oxide thin film show little dispersion up to 10 GHz. However, the resonance oscillation due to the parasitics is evident between 10 GHz and 40 GHz and depends on the capacitor area. Modeling of the equivalent circuits would allow us to identify the parasitic components and their effects on the measured scattering parameters.

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Documento generato il 03/04/20 alle ore 13:07:12