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Titolo:
COMPREHENSIVE STUDY OF LATERAL GRAIN-GROWTH IN POLY-SI FILMS BY EXCIMER-LASER ANNEALING AND ITS APPLICATION TO THIN-FILM TRANSISTORS
Autore:
KURIYAMA H; NOHDA T; AYA Y; KUWAHARA T; WAKISAKA K; KIYAMA S; TSUDA S;
Indirizzi:
SANYO ELECT CO LTD,1-18-13 HASHIRIDANI HIRAKATA OSAKA 573 JAPAN GIANT ELECTR TECHNOL CO LTD,CHUO KU TOKYO 103 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 10, volume: 33, anno: 1994,
pagine: 5657 - 5662
SICI:
0021-4922(1994)33:10<5657:CSOLGI>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
AMORPHOUS-SILICON FILMS; TFTS; CRYSTALLIZATION;
Keywords:
POLY-SI; EXCIMER LASER ANNEALING; LATERAL GRAIN GROWTH; GRAIN SIZE; CRYSTALLOGRAPHIC ORIENTATION; SURFACE FREE ENERGY; ANISOTROPY; THIN-FILM TRANSISTORS; FIELD EFFECT MOBILITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
20
Recensione:
Indirizzi per estratti:
Citazione:
H. Kuriyama et al., "COMPREHENSIVE STUDY OF LATERAL GRAIN-GROWTH IN POLY-SI FILMS BY EXCIMER-LASER ANNEALING AND ITS APPLICATION TO THIN-FILM TRANSISTORS", JPN J A P 1, 33(10), 1994, pp. 5657-5662

Abstract

Lateral grain growth in nondoped poly-Si films was studied by using Si thin films (500 Angstrom) with different structures as a starting material for excimer laser crystallization. It was clarified that the lateral grain growth phenomenon (micron-size grains with strong (111) orientation) upon excimer laser annealing was strongly affected by both the microstructure and the orientation of the initial Si thin films. This result supports our previous speculation that the principal driving force of the lateral grain growth phenomenon is surface energy anisotropy. Poly-Si thin-him transistors using these films show a high field effect mobility of 440 cm(2)/V.s, achieved through a low-temperatureprocess below 600 degrees C. This excellent electrical characteristicis thought to be due to the large grain size of poly-Si thin film with controlled orientation, good crystallinity, and a smooth surface.

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Documento generato il 22/10/20 alle ore 02:31:19