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Titolo:
Atomic layer deposition of thin films using O-2 as oxygen source
Autore:
Schuisky, M; Aarik, J; Kukli, K; Aidla, A; Harsta, A;
Indirizzi:
Uppsala Univ, Angstrom Lab, SE-75121 Uppsala, Sweden Uppsala Univ Uppsala Sweden SE-75121 strom Lab, SE-75121 Uppsala, Sweden Univ Tartu, Inst Sci Mat, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 Inst Sci Mat, EE-51010 Tartu, Estonia Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia Univ Tartu Tartu Estonia EE-51010 hys & Technol, EE-51010 Tartu, Estonia
Titolo Testata:
LANGMUIR
fascicolo: 18, volume: 17, anno: 2001,
pagine: 5508 - 5512
SICI:
0743-7463(20010904)17:18<5508:ALDOTF>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; TITANIUM ISOPROPOXIDE; EPITAXY; GROWTH; OXIDE; TIO2; PRECURSOR; REDUCTION; PRESSURE; AMBIENT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
31
Recensione:
Indirizzi per estratti:
Indirizzo: Kukli, K Uppsala Univ, Angstrom Lab, POB 538, SE-75121 Uppsala, Sweden Uppsala Univ POB 538 Uppsala Sweden SE-75121 121 Uppsala, Sweden
Citazione:
M. Schuisky et al., "Atomic layer deposition of thin films using O-2 as oxygen source", LANGMUIR, 17(18), 2001, pp. 5508-5512

Abstract

Atomic layer deposition of TiO2 films was realized by using alternate pulses of TiI4 and O-2. The film growth mechanism was studied by quartz crystalmicrobalance in the temperature range 200-350 degreesC. The adsorption of TiI4 proceeded via partial decomposition of TiI4, which resulted in an enhanced reactivity by the formation of a TiIx surface layer with x < 3. The reactivity of O-2 toward this layer was sufficient to form TiO2 at an O-2 pulse duration of 2 s when the substrate temperature was not lower than 235 degreesC. TiO2 films were also grown on Si(100) substrates at deposition temperatures between 230 and 460 degreesC. No residual iodine could be detectedin the films grown at temperatures higher than 230 degreesC. Phase-pure anatase was formed in the whole temperature range except at the highest temperature where rutile was also obtained.

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Documento generato il 04/12/20 alle ore 19:19:17